Growth of MnSe, Cd1-xSe, and MnS1-xSex films by molecular bema epitaxy (MBE) and elemental vapor transport epitaxy (EVTE) techniques

A. I. Gurary, R. A. Dtall, G. S. Tompa, Yicheng Lu, W. E. Mayo, C. Y. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work addressed the MBE and EVTE growth of wide band gap semiconductor materials such as MnSe, Cd1-xMnxSe, and MnS1-xSex which have potential application for blue-green light emitters. Grown materials show good surface morphology and uniformity. SIMS analysis demonstrated stable elemental composition throughout the film thickness and a sharp interface with the substrate.

Original languageEnglish (US)
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages305-310
Number of pages6
Volume326
ISBN (Print)1558992251
StatePublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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