Growth of the optical conductivity in the Cu-O planes

S. L. Cooper, G. A. Thomas, J. Orenstein, D. H. Rapkine, A. J. Millis, Sang-Wook Cheong, A. S. Cooper, Z. Fisk

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We have studied the development of the optical conductivity as electrons are added to the Cu-O planes in Pr2-xCexCuO4-by varying x(0x0.2). In the metallic phases, contributions to the optical conductivity below 3 eV arise from three sources: mobile carriers, mid-infrared excitations, and charge-transfer excitations. The mobile carrier spectral weight grows roughly linearly with x, while the mid-infrared band appears to evolve at low doping via a transfer of spectral weight from the charge-transfer band. Comparing these results with hole doping in La2-xSrxCuO4- indicates an electron-hole symmetry that is not anticipated by standard charge-transfer insulator models.

Original languageEnglish (US)
Pages (from-to)11605-11608
Number of pages4
JournalPhysical Review B
Issue number16
StatePublished - Jan 1 1990

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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    Cooper, S. L., Thomas, G. A., Orenstein, J., Rapkine, D. H., Millis, A. J., Cheong, S-W., Cooper, A. S., & Fisk, Z. (1990). Growth of the optical conductivity in the Cu-O planes. Physical Review B, 41(16), 11605-11608.