Gunn effect and THz frequency power generation in n+-n-n+ GaN structures

V. Gružinskis, J. H. Zhao, P. Shiktorov, E. Starikov

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Electron transport in n+-n-n+ GaN structures is simulated by Monte Carlo Particle technique. The peculiarities of Gunn effect in GaN are discussed. The microwave power generation in parallel resonant circuit is simulated. It is shown that GaN offers the potential to generate microwave powers over 100 mW at terahertz frequencies.

Original languageEnglish (US)
Pages (from-to)341-344
Number of pages4
JournalMaterials Science Forum
StatePublished - 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • Electron Transport
  • Gallium Nitride
  • Modelling, Microwave Generation
  • Monte Carlo Particle
  • Terahertz Frequency
  • n-n-n Diodes


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