Abstract
Electron transport in n+-n-n+ GaN structures is simulated by Monte Carlo Particle technique. The peculiarities of Gunn effect in GaN are discussed. The microwave power generation in parallel resonant circuit is simulated. It is shown that GaN offers the potential to generate microwave powers over 100 mW at terahertz frequencies.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 341-344 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 297-298 |
| State | Published - 1999 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Keywords
- Electron Transport
- Gallium Nitride
- Modelling, Microwave Generation
- Monte Carlo Particle
- Terahertz Frequency
- n-n-n Diodes