Gunn effect and THz frequency power generation in n+-n-n+ GaN structures

V. Gružinskis, J. H. Zhao, P. Shiktorov, E. Starikov

Research output: Contribution to journalArticle

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Abstract

Electron transport in n+-n-n+ GaN structures is simulated by Monte Carlo Particle technique. The peculiarities of Gunn effect in GaN are discussed. The microwave power generation in parallel resonant circuit is simulated. It is shown that GaN offers the potential to generate microwave powers over 100 mW at terahertz frequencies.

Original languageEnglish (US)
Pages (from-to)341-344
Number of pages4
JournalMaterials Science Forum
Volume297-298
StatePublished - Jan 1 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Electron Transport
  • Gallium Nitride
  • Modelling, Microwave Generation
  • Monte Carlo Particle
  • Terahertz Frequency
  • n-n-n Diodes

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  • Cite this

    Gružinskis, V., Zhao, J. H., Shiktorov, P., & Starikov, E. (1999). Gunn effect and THz frequency power generation in n+-n-n+ GaN structures. Materials Science Forum, 297-298, 341-344.