Helium ion beam lithography (HIBL) using HafSOx as the resist

Feixiang Luo, Viacheslav Manichev, Mengjun Li, Gavin Mitchson, Boris Yakshinskiy, Torgny Gustafsson, David Johnson, Eric Garfunkel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.

Original languageEnglish (US)
Title of host publicationAdvances in Patterning Materials and Processes XXXIII
EditorsTodd R. Younkin, Christoph K. Hohle
PublisherSPIE
ISBN (Electronic)9781510600140
DOIs
StatePublished - Jan 1 2016
EventAdvances in Patterning Materials and Processes XXXIII - San Jose, United States
Duration: Feb 22 2016Feb 25 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9779
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherAdvances in Patterning Materials and Processes XXXIII
CountryUnited States
CitySan Jose
Period2/22/162/25/16

Fingerprint

Ion beam lithography
Helium
helium ions
E-beam Lithography
Lithography
Resist
lithography
ion beams
Extreme ultraviolet lithography
Extreme Ultraviolet Lithography
Roughness
Surface roughness
Line
Linewidth
Dose
Energy dissipation
High Resolution
Monte Carlo Simulation
Excitation
roughness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • Critical dimension
  • HIBL
  • HafSOx
  • Line-edge roughness
  • Monte Carlo simulation
  • Secondary electrons
  • Sensitivity

Cite this

Luo, F., Manichev, V., Li, M., Mitchson, G., Yakshinskiy, B., Gustafsson, T., ... Garfunkel, E. (2016). Helium ion beam lithography (HIBL) using HafSOx as the resist. In T. R. Younkin, & C. K. Hohle (Eds.), Advances in Patterning Materials and Processes XXXIII [977928] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9779). SPIE. https://doi.org/10.1117/12.2219239
Luo, Feixiang ; Manichev, Viacheslav ; Li, Mengjun ; Mitchson, Gavin ; Yakshinskiy, Boris ; Gustafsson, Torgny ; Johnson, David ; Garfunkel, Eric. / Helium ion beam lithography (HIBL) using HafSOx as the resist. Advances in Patterning Materials and Processes XXXIII. editor / Todd R. Younkin ; Christoph K. Hohle. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.",
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Luo, F, Manichev, V, Li, M, Mitchson, G, Yakshinskiy, B, Gustafsson, T, Johnson, D & Garfunkel, E 2016, Helium ion beam lithography (HIBL) using HafSOx as the resist. in TR Younkin & CK Hohle (eds), Advances in Patterning Materials and Processes XXXIII., 977928, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9779, SPIE, Advances in Patterning Materials and Processes XXXIII, San Jose, United States, 2/22/16. https://doi.org/10.1117/12.2219239

Helium ion beam lithography (HIBL) using HafSOx as the resist. / Luo, Feixiang; Manichev, Viacheslav; Li, Mengjun; Mitchson, Gavin; Yakshinskiy, Boris; Gustafsson, Torgny; Johnson, David; Garfunkel, Eric.

Advances in Patterning Materials and Processes XXXIII. ed. / Todd R. Younkin; Christoph K. Hohle. SPIE, 2016. 977928 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9779).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Helium ion beam lithography (HIBL) using HafSOx as the resist

AU - Luo, Feixiang

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AU - Li, Mengjun

AU - Mitchson, Gavin

AU - Yakshinskiy, Boris

AU - Gustafsson, Torgny

AU - Johnson, David

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N2 - Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.

AB - Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.

KW - Critical dimension

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KW - Line-edge roughness

KW - Monte Carlo simulation

KW - Secondary electrons

KW - Sensitivity

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Luo F, Manichev V, Li M, Mitchson G, Yakshinskiy B, Gustafsson T et al. Helium ion beam lithography (HIBL) using HafSOx as the resist. In Younkin TR, Hohle CK, editors, Advances in Patterning Materials and Processes XXXIII. SPIE. 2016. 977928. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2219239