Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition

C. S. Chern, S. Liang, Z. Q. Shi, S. Yoon, A. Safari, P. Lu, B. H. Kear, B. H. Goodreau, T. J. Marks, S. Y. Hou

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Abstract

Epitaxial Ba1-xSrxTiO3(BST)/YBa 2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that 〈100〉 oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSr xTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba 1-xSrxTiO3 films had Curie temperatures of about 30°C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr 0.25TiO3 and Ba0.8Sr0.2TiO 3. The structural and electrical properties of the Ba 1-xSrxTiO3/YBa2Cu3O 7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

Original languageEnglish (US)
Pages (from-to)3181-3183
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number23
DOIs
StatePublished - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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