Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition

C. S. Chern; S. Liang; Z. Q. Shi; S. Yoon; A. Safari; P. Lu; B. H. Kear; B. H. Goodreau; T. J. Marks; S. Y. Hou

doi:10.1063/1.111332

Heteroepitaxial growth of Ba_1-xSr_xTiO ₃/YBa₂Cu₃O_7-x by plasma-enhanced metalorganic chemical vapor deposition

C. S. Chern, S. Liang, Z. Q. Shi, S. Yoon, A. Safari, P. Lu, B. H. Kear, B. H. Goodreau, T. J. Marks, S. Y. Hou

School of Engineering, Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Epitaxial Ba_1-xSr_xTiO₃(BST)/YBa ₂Cu₃O_7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that 〈100〉 oriented Ba_1-xSr_xTiO₃ layers were epitaxially deposited on epitaxial (001) YBa₂Cu₃O_7-x layers. The leakage current density through the Ba_1-xSr _xTiO₃ films was about 10^-7 A/cm² at 2 V (about 2×10⁵ V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba _1-xSr_xTiO₃ films had Curie temperatures of about 30°C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba_0.75Sr _0.25TiO₃ and Ba_0.8Sr_0.2TiO ₃. The structural and electrical properties of the Ba _1-xSr_xTiO₃/YBa₂Cu₃O _7-x heterostructure indicated that conductive oxide materials with close lattice to Ba_1-xSr_xTiO₃ can be good candidates for the bottom electrode.

Original language	English (US)
Pages (from-to)	3181-3183
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	23
DOIs	https://doi.org/10.1063/1.111332
State	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.111332

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@article{60001054f8274ad984d0fb528ef66262,

title = "Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition",

abstract = "Epitaxial Ba1-xSrxTiO3(BST)/YBa 2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that 〈100〉 oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSr xTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba 1-xSrxTiO3 films had Curie temperatures of about 30°C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr 0.25TiO3 and Ba0.8Sr0.2TiO 3. The structural and electrical properties of the Ba 1-xSrxTiO3/YBa2Cu3O 7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.",

author = "Chern, {C. S.} and S. Liang and Shi, {Z. Q.} and S. Yoon and A. Safari and P. Lu and Kear, {B. H.} and Goodreau, {B. H.} and Marks, {T. J.} and Hou, {S. Y.}",

year = "1994",

doi = "10.1063/1.111332",

language = "English (US)",

volume = "64",

pages = "3181--3183",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

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TY - JOUR

T1 - Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition

AU - Chern, C. S.

AU - Liang, S.

AU - Shi, Z. Q.

AU - Yoon, S.

AU - Safari, A.

AU - Lu, P.

AU - Kear, B. H.

AU - Goodreau, B. H.

AU - Marks, T. J.

AU - Hou, S. Y.

PY - 1994

Y1 - 1994

N2 - Epitaxial Ba1-xSrxTiO3(BST)/YBa 2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that 〈100〉 oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSr xTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba 1-xSrxTiO3 films had Curie temperatures of about 30°C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr 0.25TiO3 and Ba0.8Sr0.2TiO 3. The structural and electrical properties of the Ba 1-xSrxTiO3/YBa2Cu3O 7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

AB - Epitaxial Ba1-xSrxTiO3(BST)/YBa 2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that 〈100〉 oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSr xTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba 1-xSrxTiO3 films had Curie temperatures of about 30°C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr 0.25TiO3 and Ba0.8Sr0.2TiO 3. The structural and electrical properties of the Ba 1-xSrxTiO3/YBa2Cu3O 7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

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Heteroepitaxial growth of Ba_1-xSr_xTiO ₃/YBa₂Cu₃O_7-x by plasma-enhanced metalorganic chemical vapor deposition

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