Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition

Martin M. Frank, Glen D. Wilk, Dmitri Starodub, Torgny Gustafsson, Eric Garfunkel, Yves J. Chabal, John Grazul, David A. Muller

Research output: Contribution to journalArticlepeer-review

323 Scopus citations


High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III-V semiconductors have long proven elusive. High-permittivity (high- κ) gate dielectrics may enable their fabrication. We have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition. As-deposited films are continuous and predominantly amorphous. A native oxide remains intact underneath Hf O2 during growth, while thinning occurs during Al2 O3 deposition. Hydrofluoric acid etching prior to growth minimizes the final interlayer thickness. Thermal treatments at ~600 °C decompose arsenic oxides and remove interfacial oxygen. These observations explain the improved electrical quality and increased gate stack capacitance after thermal treatments.

Original languageEnglish (US)
Article number152904
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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