High-frequency switching of SiC high-voltage LJFET

Kuang Sheng; Yongxi Zhang; Liangchum Yu; Ming Su; Jian H. Zhao

doi:10.1109/TPEL.2008.2005984

High-frequency switching of SiC high-voltage LJFET

Kuang Sheng, Yongxi Zhang, Liangchum Yu, Ming Su, Jian H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this paper, inductive-load switching of a high-voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high-frequency, high-temperature applications. A new "capacitor-coupled"gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the silicon carbide (SiC) HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A, and 250 °C with good efficiency, significantly higher than silicon devices with similar voltage ratings.

Original language	English (US)
Pages (from-to)	271-277
Number of pages	7
Journal	IEEE Transactions on Power Electronics
Volume	24
Issue number	1
DOIs	https://doi.org/10.1109/TPEL.2008.2005984
State	Published - 2009

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

High frequency
JFET
Power ICs
Silicon carbide (SiC)

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10.1109/TPEL.2008.2005984

Cite this

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title = "High-frequency switching of SiC high-voltage LJFET",

abstract = "In this paper, inductive-load switching of a high-voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high-frequency, high-temperature applications. A new {"}capacitor-coupled{"}gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the silicon carbide (SiC) HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A, and 250 °C with good efficiency, significantly higher than silicon devices with similar voltage ratings.",

keywords = "High frequency, JFET, Power ICs, Silicon carbide (SiC)",

author = "Kuang Sheng and Yongxi Zhang and Liangchum Yu and Ming Su and Zhao, {Jian H.}",

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T1 - High-frequency switching of SiC high-voltage LJFET

AU - Sheng, Kuang

AU - Zhang, Yongxi

AU - Yu, Liangchum

AU - Su, Ming

AU - Zhao, Jian H.

PY - 2009

Y1 - 2009

N2 - In this paper, inductive-load switching of a high-voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high-frequency, high-temperature applications. A new "capacitor-coupled"gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the silicon carbide (SiC) HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A, and 250 °C with good efficiency, significantly higher than silicon devices with similar voltage ratings.

AB - In this paper, inductive-load switching of a high-voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high-frequency, high-temperature applications. A new "capacitor-coupled"gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the silicon carbide (SiC) HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A, and 250 °C with good efficiency, significantly higher than silicon devices with similar voltage ratings.

KW - High frequency

KW - JFET

KW - Power ICs

KW - Silicon carbide (SiC)

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JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

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High-frequency switching of SiC high-voltage LJFET

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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