High-frequency switching of SiC high-voltage LJFET

Kuang Sheng, Yongxi Zhang, Liangchum Yu, Ming Su, Jian H. Zhao

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In this paper, inductive-load switching of a high-voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high-frequency, high-temperature applications. A new "capacitor-coupled"gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the silicon carbide (SiC) HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A, and 250 °C with good efficiency, significantly higher than silicon devices with similar voltage ratings.

Original languageEnglish (US)
Pages (from-to)271-277
Number of pages7
JournalIEEE Transactions on Power Electronics
Issue number1
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


  • High frequency
  • JFET
  • Power ICs
  • Silicon carbide (SiC)


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