High performance 1500 V 4H-SiC junction barrier Schottky diodes

J. H. Zhao, P. Alexandrov, L. Fursin, Z. C. Feng, M. Weiner

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

A report on the design and fabrication of high forward current density and low reverse leakage current density 4H-SiC junction barrier diodes (JBS) was presented. The cross sectional view of the JBS diodes was shown where the edge termination was formed by multi-step junction termination extension (MJTE). Metal-insulator-semiconductor (MIS) capacitors were used and were fabricated directly on zinc oxide films.

Original languageEnglish (US)
Pages (from-to)1389-1390
Number of pages2
JournalElectronics Letters
Volume38
Issue number22
DOIs
StatePublished - Oct 24 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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