A report on the design and fabrication of high forward current density and low reverse leakage current density 4H-SiC junction barrier diodes (JBS) was presented. The cross sectional view of the JBS diodes was shown where the edge termination was formed by multi-step junction termination extension (MJTE). Metal-insulator-semiconductor (MIS) capacitors were used and were fabricated directly on zinc oxide films.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering