High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD

Jun Zhao, Larry Li, Wumin Wang, Yicheng Lu

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic epitaxial chemical vapor deposition. Fabricated with ridge waveguide, the lasers achieved an output power of 386 mW in the fundamental lateral mode without kink observed. By optimizing the laser structure parameters, a very low transverse beam divergence of 22.1° and a high slope efficiency of up to 0.89 mW/mA were obtained. The narrow transverse far field enables an output power of over 290 mW being coupled into the single-mode fiber with a high coupling efficiency of 83.2% at 430 mA. Life testing at various powers shows excellent long-term reliability after 3500 h.

Original languageEnglish (US)
Pages (from-to)1507-1509
Number of pages3
JournalIEEE Photonics Technology Letters
Volume15
Issue number11
DOIs
StatePublished - Nov 1 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Keywords

  • Coupling efficiency
  • Device reliability
  • Kink power
  • Laser beam
  • Quantum-well lasers
  • Ridge waveguide

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