High-Pressure Synthesis of Polar and Antiferromagnetic Mn2MnMoO6

Shuang Zhao, Jin Jin Yang, Yi Feng Han, Mei Xia Wu, Mark Croft, Peter W. Stephens, David Walker, Martha Greenblatt, Man Rong Li

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Polar and magnetic Mn2MnMoO6 with a Ni3TeO6-type structure (R3) was synthesized at 1673 K under 8 GPa. Mn2MnMoO6 shows a large spontaneous polarization of 65.76 μC·cm-2, two magnetic transitions at 19 and 47 K, and a strong magnetic frustration factor (f) of 18.4. The polarization reversal barrier is estimated to be 232 meV. X-ray absorption spectroscopy established Mn22+Mn2+Mo6+O6 formal oxidation states. Theoretical calculations indicate an antiferromagnetic ground state of up-down-up-down-up-down spin alignment for Mn ions and a semiconductor characteristic with a band gap around 1.06 eV. Magnetism-dependent dielectric responses show no magnetodielectric and electric coupling, which is attributed to the high polarization reversal barrier and grain boundary effects.

Original languageEnglish (US)
Pages (from-to)1930-1936
Number of pages7
JournalChemistry of Materials
Volume34
Issue number4
DOIs
StatePublished - Feb 22 2022

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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