High-Pressure Synthesis of Polar and Antiferromagnetic Mn2MnMoO6

Shuang Zhao, Jin Jin Yang, Yi Feng Han, Mei Xia Wu, Mark Croft, Peter W. Stephens, David Walker, Martha Greenblatt, Man Rong Li

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Polar and magnetic Mn2MnMoO6 with a Ni3TeO6-type structure (R3) was synthesized at 1673 K under 8 GPa. Mn2MnMoO6 shows a large spontaneous polarization of 65.76 μC·cm-2, two magnetic transitions at 19 and 47 K, and a strong magnetic frustration factor (f) of 18.4. The polarization reversal barrier is estimated to be 232 meV. X-ray absorption spectroscopy established Mn22+Mn2+Mo6+O6 formal oxidation states. Theoretical calculations indicate an antiferromagnetic ground state of up-down-up-down-up-down spin alignment for Mn ions and a semiconductor characteristic with a band gap around 1.06 eV. Magnetism-dependent dielectric responses show no magnetodielectric and electric coupling, which is attributed to the high polarization reversal barrier and grain boundary effects.

Original languageEnglish (US)
Pages (from-to)1930-1936
Number of pages7
JournalChemistry of Materials
Issue number4
StatePublished - Feb 22 2022

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


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