High Q-factor inductors integrated on MCM Si substrates

Larry Zu, Yicheng Lu, Robert C. Frye, Maureen Y. Lau, Sheue Chyn Sandy Chen, Dean P. Kossives, Jenshan Lin, King L. Tai

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


High quality factor (Q) inductors were designed and fabricated on high-resistivity (2000 Ω-cm) Si substrates with multichip module (MCM) fabrication technology. A Q-factor of 30 was achieved for an inductor of 4 nH at 1-2 GHz. To enhance the Q-factor and reduce the parasitic coupling capacitance, a staggered double metal-layered structure was utilized by taking advantage of the double-layered metal lines in MCM. With electromagnetic simulation tools, computer-aided analysis was used to optimize the device characteristics. The skin effect and the lossy substrate effect on the performance of the radio frequency (RF) thin-film inductors were studied. The fabrication process used polyimide as the dielectric layer and aluminum as the metal layer. The use of the low dielectric-constant material, polyimide, reduces the parasitic coupling capacitance between metal lines and increases the quality factor and the self-resonant frequency for the RF integrated inductors.

Original languageEnglish (US)
Pages (from-to)635-642
Number of pages8
JournalIEEE Transactions on Components Packaging and Manufacturing Technology Part B
Issue number3
StatePublished - Aug 1996

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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