In principle, Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope can obtain information related to the electronic structure of single defect structures in semiconductors. The instrumental requirements necessary to accomplish this are discussed. Examples include: Si and GaAs interband excitations, graphite EXELFS analysis, and surface and defect induced structure at the SiL2,3 edge.
|Original language||English (US)|
|Number of pages||8|
|State||Published - Apr 1 1989|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics