High resolution energy-loss spectroscopy

P. E. Batson

doi:10.1016/0304-3991(89)90265-9

High resolution energy-loss spectroscopy

P. E. Batson

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In principle, Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope can obtain information related to the electronic structure of single defect structures in semiconductors. The instrumental requirements necessary to accomplish this are discussed. Examples include: Si and GaAs interband excitations, graphite EXELFS analysis, and surface and defect induced structure at the SiL_2,3 edge.

Original language	English (US)
Pages (from-to)	32-39
Number of pages	8
Journal	Ultramicroscopy
Volume	28
Issue number	1-4
DOIs	https://doi.org/10.1016/0304-3991(89)90265-9
State	Published - Apr 1 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/0304-3991(89)90265-9

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title = "High resolution energy-loss spectroscopy",

abstract = "In principle, Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope can obtain information related to the electronic structure of single defect structures in semiconductors. The instrumental requirements necessary to accomplish this are discussed. Examples include: Si and GaAs interband excitations, graphite EXELFS analysis, and surface and defect induced structure at the SiL2,3 edge.",

author = "Batson, {P. E.}",

year = "1989",

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doi = "10.1016/0304-3991(89)90265-9",

language = "English (US)",

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journal = "Ultramicroscopy",

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AU - Batson, P. E.

PY - 1989/4/1

Y1 - 1989/4/1

N2 - In principle, Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope can obtain information related to the electronic structure of single defect structures in semiconductors. The instrumental requirements necessary to accomplish this are discussed. Examples include: Si and GaAs interband excitations, graphite EXELFS analysis, and surface and defect induced structure at the SiL2,3 edge.

AB - In principle, Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope can obtain information related to the electronic structure of single defect structures in semiconductors. The instrumental requirements necessary to accomplish this are discussed. Examples include: Si and GaAs interband excitations, graphite EXELFS analysis, and surface and defect induced structure at the SiL2,3 edge.

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UR - http://www.scopus.com/inward/citedby.url?scp=0024641531&partnerID=8YFLogxK

U2 - 10.1016/0304-3991(89)90265-9

DO - 10.1016/0304-3991(89)90265-9

M3 - Article

AN - SCOPUS:0024641531

SN - 0304-3991

VL - 28

SP - 32

EP - 39

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 1-4

ER -

High resolution energy-loss spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

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