High resolution ion scattering study of silicon oxynitridation

H. C. Lu; E. P. Gusev; T. Gustafsson; E. Garfunkel; M. L. Green; D. Brasen; L. C. Feldman

doi:10.1063/1.117687

High resolution ion scattering study of silicon oxynitridation

H. C. Lu, E. P. Gusev, T. Gustafsson, E. Garfunkel, M. L. Green, D. Brasen, L. C. Feldman

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Abstract

High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N₂O results in a lower concentration and a broader distribution of nitrogen than in the NO case.

Original language	English (US)
Pages (from-to)	2713-2715
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	18
DOIs	https://doi.org/10.1063/1.117687
State	Published - Oct 28 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.117687

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@article{f0527eecc1e440bda73b5dbb23e372f8,

title = "High resolution ion scattering study of silicon oxynitridation",

abstract = "High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case.",

author = "Lu, {H. C.} and Gusev, {E. P.} and T. Gustafsson and E. Garfunkel and Green, {M. L.} and D. Brasen and Feldman, {L. C.}",

year = "1996",

month = oct,

day = "28",

doi = "10.1063/1.117687",

language = "English (US)",

volume = "69",

pages = "2713--2715",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - High resolution ion scattering study of silicon oxynitridation

AU - Lu, H. C.

AU - Gusev, E. P.

AU - Gustafsson, T.

AU - Garfunkel, E.

AU - Green, M. L.

AU - Brasen, D.

AU - Feldman, L. C.

PY - 1996/10/28

Y1 - 1996/10/28

N2 - High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case.

AB - High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case.

UR - http://www.scopus.com/inward/record.url?scp=0001065135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001065135&partnerID=8YFLogxK

U2 - 10.1063/1.117687

DO - 10.1063/1.117687

M3 - Article

AN - SCOPUS:0001065135

SN - 0003-6951

VL - 69

SP - 2713

EP - 2715

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

High resolution ion scattering study of silicon oxynitridation

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