High-temperature switching characteristics of 6H-SiC thyristor

K. Xie, J. R. Flemish, T. Burke, W. R. Buchwald, J. H. Zhao

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


A 280 V 6H-SiC thyristor has been fabricated and characterized. The switching characteristics of the SiC thyristor were investigated over a temperature range from 23 °C to 400 °C with a switched current density of 4900 A/cm2 being observed under pulse bias condition. The thyristor has shown a dV/dt of 400 V/ms. Both the turn-on time and turn-off time increase significantly at 400 °C. The thyristor forward breakover voltage decreases by only 5% when the operating temperature is increased from 23 °C to 400 °C.

Original languageEnglish (US)
Pages (from-to)93-98
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'High-temperature switching characteristics of 6H-SiC thyristor'. Together they form a unique fingerprint.

Cite this