High-temperature switching characteristics of 6H-SiC thyristor

K. Xie; J. R. Flemish; T. Burke; W. R. Buchwald; J. H. Zhao

doi:10.1557/proc-423-93

High-temperature switching characteristics of 6H-SiC thyristor

K. Xie, J. R. Flemish, T. Burke, W. R. Buchwald, J. H. Zhao

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A 280 V 6H-SiC thyristor has been fabricated and characterized. The switching characteristics of the SiC thyristor were investigated over a temperature range from 23 °C to 400 °C with a switched current density of 4900 A/cm² being observed under pulse bias condition. The thyristor has shown a dV/dt of 400 V/ms. Both the turn-on time and turn-off time increase significantly at 400 °C. The thyristor forward breakover voltage decreases by only 5% when the operating temperature is increased from 23 °C to 400 °C.

Original language	English (US)
Pages (from-to)	93-98
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	423
DOIs	https://doi.org/10.1557/proc-423-93
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{fc8cfe5b3fa645aeac837bfa1f2488ae,

title = "High-temperature switching characteristics of 6H-SiC thyristor",

abstract = "A 280 V 6H-SiC thyristor has been fabricated and characterized. The switching characteristics of the SiC thyristor were investigated over a temperature range from 23 °C to 400 °C with a switched current density of 4900 A/cm2 being observed under pulse bias condition. The thyristor has shown a dV/dt of 400 V/ms. Both the turn-on time and turn-off time increase significantly at 400 °C. The thyristor forward breakover voltage decreases by only 5% when the operating temperature is increased from 23 °C to 400 °C.",

author = "K. Xie and Flemish, {J. R.} and T. Burke and Buchwald, {W. R.} and Zhao, {J. H.}",

year = "1996",

doi = "10.1557/proc-423-93",

language = "English (US)",

volume = "423",

pages = "93--98",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - High-temperature switching characteristics of 6H-SiC thyristor

AU - Xie, K.

AU - Flemish, J. R.

AU - Burke, T.

AU - Buchwald, W. R.

AU - Zhao, J. H.

PY - 1996

Y1 - 1996

N2 - A 280 V 6H-SiC thyristor has been fabricated and characterized. The switching characteristics of the SiC thyristor were investigated over a temperature range from 23 °C to 400 °C with a switched current density of 4900 A/cm2 being observed under pulse bias condition. The thyristor has shown a dV/dt of 400 V/ms. Both the turn-on time and turn-off time increase significantly at 400 °C. The thyristor forward breakover voltage decreases by only 5% when the operating temperature is increased from 23 °C to 400 °C.

AB - A 280 V 6H-SiC thyristor has been fabricated and characterized. The switching characteristics of the SiC thyristor were investigated over a temperature range from 23 °C to 400 °C with a switched current density of 4900 A/cm2 being observed under pulse bias condition. The thyristor has shown a dV/dt of 400 V/ms. Both the turn-on time and turn-off time increase significantly at 400 °C. The thyristor forward breakover voltage decreases by only 5% when the operating temperature is increased from 23 °C to 400 °C.

UR - http://www.scopus.com/inward/record.url?scp=0030398529&partnerID=8YFLogxK

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U2 - 10.1557/proc-423-93

DO - 10.1557/proc-423-93

M3 - Conference article

AN - SCOPUS:0030398529

SN - 0272-9172

VL - 423

SP - 93

EP - 98

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

High-temperature switching characteristics of 6H-SiC thyristor

Abstract

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