HIGH TRANSCONDUCTANCE InAlAs/InGaAs DOUBLE HETEROSTRUCTURE MESFETS WITH IN-SITU ALUMINUM OXIDE GATE BARRIER.

T. Y. Chang, R. E. Behringer, Richard Howard, A. S.H. Liao, L. D. Jackel, E. A. Caridi, W. J. Skocpol, R. W. Epworth

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

By incorporating an in-situ aluminum oxide gate barrier in InAlAs/InGaAs double heterostructure FETs, the authors have reduced the gate leakage current by more than an order of magnitude. The measured transconductance is 130 mS/mm and the device pinches off at -1. 5 V. The oxide barrier is prepared by in-situ deposition of 2 nm Al in an MBE system followed by complete oxidation in air or during exposure to an oxygen plasma. The device structure and fabrication process are readily scaled to submicron gate lengths.

Original languageEnglish (US)
Pages (from-to)356-359
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 1984
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this