@inproceedings{a7417eb7c9cf4618a8d0e21a5110c864,
title = "High voltage 4H-SiC BJTs with deep mesa edge termination",
abstract = "This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V - 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT's DC current gain (β) is about 37, and the specific on-resistance (RSP-ON) is ∼3.0 mΩ-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.",
keywords = "Bipolar junction transistor, Edge termination, High voltage, Mesa isolation, Power transistor, Trench isolation",
author = "Jianhui Zhang and Zhao, {Jian H.} and Xiaohui Wang and Xueqing Li and Leonid Fursin and Petre Alexandrov and Gagliardi, {Mari Anne} and Mike Lange and Chris Dries",
year = "2011",
doi = "10.4028/www.scientific.net/MSF.679-680.710",
language = "English (US)",
isbn = "9783037850794",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "710--713",
editor = "Monakhov, {Edouard V.} and Tamas Hornos and Svensson, {Bengt G.}",
booktitle = "Silicon Carbide and Related Materials 2010",
}