High voltage 4H-SiC BJTs with deep mesa edge termination

Jianhui Zhang, Jian H. Zhao, Xiaohui Wang, Xueqing Li, Leonid Fursin, Petre Alexandrov, Mari Anne Gagliardi, Mike Lange, Chris Dries

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V - 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT's DC current gain (β) is about 37, and the specific on-resistance (RSP-ON) is ∼3.0 mΩ-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2010
EditorsEdouard V. Monakhov, Tamas Hornos, Bengt G. Svensson
PublisherTrans Tech Publications Ltd
Pages710-713
Number of pages4
ISBN (Print)9783037850794
DOIs
StatePublished - 2011

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Bipolar junction transistor
  • Edge termination
  • High voltage
  • Mesa isolation
  • Power transistor
  • Trench isolation

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