This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1 kV) and high dc current gain (β = 32) at a collector current level of Ic = 3.83A (Jc = 319 A/cm2). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly unproved blocking voltage. A specific on-resistance of 17 mΩ·cm2 has been achieved for collector current densities up to 289 A/cm2.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Bipolar junction transistors (BJTs)
- Power transistors
- Silicon carbide