@article{3e0ebd55fd1b42b980568411dd1af28e,
title = "High Voltage (>1 kV) and High Current Gain (32) 4H-SiC Power BJTs Using Al-Free Ohmic Contact to the Base",
abstract = "This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1 kV) and high dc current gain (β = 32) at a collector current level of Ic = 3.83A (Jc = 319 A/cm2). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly unproved blocking voltage. A specific on-resistance of 17 mΩ·cm2 has been achieved for collector current densities up to 289 A/cm2.",
keywords = "Bipolar junction transistors (BJTs), Power transistors, Silicon carbide",
author = "Yanbin Luo and Jianhui Zhang and Petre Alexandrov and Leonid Fursin and Zhao, {Jian H.} and Terry Burke",
note = "Funding Information: Manuscript received July 31, 2003. The work of Y. Luo, J. Zhang, and J. H. Zhao at Rutgers University was supported by United Silicon Carbide, Inc. (USCI). The work of P. Alexandrov and L. Fursin at USCI was supported in part by DARPA SBIR Program (DAAH01-01-C-R188) and by TACOM SBIR Program (DAAE07-02-C-L050). Y. Luo, J. Zhang, and J. H. Zhao are with SiCLAB, ECE Department, Rutgers University, Piscataway, NJ 08854 USA (e-mail: jzhao@ece.rutgers.edu). P. Alexandrov and L. Fursin are with United Silicon Carbide, Inc., New Brunswick Technology Center, New Brunswick, NJ 08901 USA. T. Burke is with the U.S. Army TACOM, Warren, MI 48397 USA. Digital Object Identifier 10.1109/LED.2003.819271 Fig. 1. (a) Cross-sectional view of the 4H-SiC BJT device. (b) Top view photo of a fabricated 4H-SiC BJT device.",
year = "2003",
month = nov,
doi = "10.1109/LED.2003.819271",
language = "English (US)",
volume = "24",
pages = "695--697",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}