High Voltage (>1 kV) and High Current Gain (32) 4H-SiC Power BJTs Using Al-Free Ohmic Contact to the Base

Yanbin Luo, Jianhui Zhang, Petre Alexandrov, Leonid Fursin, Jian H. Zhao, Terry Burke

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1 kV) and high dc current gain (β = 32) at a collector current level of Ic = 3.83A (Jc = 319 A/cm2). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly unproved blocking voltage. A specific on-resistance of 17 mΩ·cm2 has been achieved for collector current densities up to 289 A/cm2.

Original languageEnglish (US)
Pages (from-to)695-697
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number11
DOIs
StatePublished - Nov 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Bipolar junction transistors (BJTs)
  • Power transistors
  • Silicon carbide

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