H+ desorption and hydrogen pairing on the hydrogenated Si(100) surface

S. Vijayalakshmi, H. T. Liu, Z. Wu

Research output: Contribution to journalConference article

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Abstract

We report the desorption of H+ ions from hydrogenated Si(100) surface under the irradiation of 193 nm pulsed laser beam. The observed two groups of H+ ions with mean kinetic energies of 0.09±0.05 and 0.38±0.06 eV are assumed to correspond, respectively, to the H+ ions desorbing from doubly occupied and singly occupied dimers and the difference of 0.29±0.11 eV in their kinetic energies corresponds to the pairing energy on the H/Si(100) surface. The dependence of the H+ yield on the laser fluence follows approximately a cubic law and the H+ desorption cross-section is σ≈10-73 cm6 s2. The experimental results are compared with the earlier studies of H+ desorption as well as the more recent report of neutral H desorption from the H/Si(100) surface.

Original languageEnglish (US)
Pages (from-to)255-260
Number of pages6
JournalSurface Science
Volume451
Issue number1
DOIs
Publication statusPublished - Apr 20 2000
EventDIET-8: 8th International Workshop on Desorption Induced by Electronic Transitions - Long Beach, NJ, USA
Duration: Sep 27 1999Oct 1 1999

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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