Humble planar defects in SiGe nanopillars

Hongbin Yang; Shang Ren; Sobhit Singh; Emily M. Turner; Kevin S. Jones; Philip E. Batson; David Vanderbilt; Eric Garfunkel

doi:10.1103/PhysRevB.106.054114

Humble planar defects in SiGe nanopillars

Hongbin Yang, Shang Ren, Sobhit Singh, Emily M. Turner, Kevin S. Jones, Philip E. Batson, David Vanderbilt, Eric Garfunkel

School of Arts and Sciences, Physics & Astronomy

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report a {001} planar defect found in SiGe nanopillars. The defect structure, determined by atomic-resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigate several possible variants of the Humble structure using first-principles calculations and find that the one lowest in energy is in agreement with the scanning transmission electron microscope images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.

Original language	English (US)
Article number	054114
Journal	Physical Review B
Volume	106
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.106.054114
State	Published - Aug 1 2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.106.054114

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@article{1113ba9dfcfc4ede800db52cb38f73e1,

title = "Humble planar defects in SiGe nanopillars",

abstract = "We report a {001} planar defect found in SiGe nanopillars. The defect structure, determined by atomic-resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigate several possible variants of the Humble structure using first-principles calculations and find that the one lowest in energy is in agreement with the scanning transmission electron microscope images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.",

author = "Hongbin Yang and Shang Ren and Sobhit Singh and Turner, {Emily M.} and Jones, {Kevin S.} and Batson, {Philip E.} and David Vanderbilt and Eric Garfunkel",

note = "Funding Information: H.Y. and E.G. acknowledge the financial support from the U.S. Department of Energy, under Award No. DE-EE0008083. S.R. and D.V. are supported by NSF Grant No. DMR-1954856. S.S. acknowledges the support from the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences under Award No. DESC0020353. Publisher Copyright: {\textcopyright} 2022 American Physical Society. ",

year = "2022",

month = aug,

day = "1",

doi = "10.1103/PhysRevB.106.054114",

language = "English (US)",

volume = "106",

journal = "Physical Review B-Condensed Matter",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Humble planar defects in SiGe nanopillars

AU - Yang, Hongbin

AU - Ren, Shang

AU - Singh, Sobhit

AU - Turner, Emily M.

AU - Jones, Kevin S.

AU - Batson, Philip E.

AU - Vanderbilt, David

AU - Garfunkel, Eric

N1 - Funding Information: H.Y. and E.G. acknowledge the financial support from the U.S. Department of Energy, under Award No. DE-EE0008083. S.R. and D.V. are supported by NSF Grant No. DMR-1954856. S.S. acknowledges the support from the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences under Award No. DESC0020353. Publisher Copyright: © 2022 American Physical Society.

PY - 2022/8/1

Y1 - 2022/8/1

N2 - We report a {001} planar defect found in SiGe nanopillars. The defect structure, determined by atomic-resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigate several possible variants of the Humble structure using first-principles calculations and find that the one lowest in energy is in agreement with the scanning transmission electron microscope images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.

AB - We report a {001} planar defect found in SiGe nanopillars. The defect structure, determined by atomic-resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigate several possible variants of the Humble structure using first-principles calculations and find that the one lowest in energy is in agreement with the scanning transmission electron microscope images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.

UR - http://www.scopus.com/inward/record.url?scp=85137738852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85137738852&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.106.054114

DO - 10.1103/PhysRevB.106.054114

M3 - Article

AN - SCOPUS:85137738852

SN - 0163-1829

VL - 106

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 5

M1 - 054114

ER -

Humble planar defects in SiGe nanopillars

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