Humble planar defects in SiGe nanopillars

Hongbin Yang, Shang Ren, Sobhit Singh, Emily M. Turner, Kevin S. Jones, Philip E. Batson, David Vanderbilt, Eric Garfunkel

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report a {001} planar defect found in SiGe nanopillars. The defect structure, determined by atomic-resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigate several possible variants of the Humble structure using first-principles calculations and find that the one lowest in energy is in agreement with the scanning transmission electron microscope images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.

Original languageEnglish (US)
Article number054114
JournalPhysical Review B
Issue number5
StatePublished - Aug 1 2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Humble planar defects in SiGe nanopillars'. Together they form a unique fingerprint.

Cite this