Implantation-free 4H-SiC bipolar junction transistors with double base epilayers

Jianhui Zhang; Xueqing Li; Petre Alexandrov; Terry Burke; Jian H. Zhao

doi:10.1109/LED.2008.920273

Implantation-free 4H-SiC bipolar junction transistors with double base epilayers

Jianhui Zhang, Xueqing Li, Petre Alexandrov, Terry Burke, Jian H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V, with a common-emitter current gain up to 31. Improvements on reliability have also been observed, including less forward voltage drift (< 2%) and no significant degradation on current gain in the active region.

Original language	English (US)
Pages (from-to)	471-473
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	5
DOIs	https://doi.org/10.1109/LED.2008.920273
State	Published - May 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Bipolar junction transistors (BJTs)
Power transistors
Silicon carbide

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10.1109/LED.2008.920273

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title = "Implantation-free 4H-SiC bipolar junction transistors with double base epilayers",

abstract = "This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V, with a common-emitter current gain up to 31. Improvements on reliability have also been observed, including less forward voltage drift (< 2%) and no significant degradation on current gain in the active region.",

keywords = "Bipolar junction transistors (BJTs), Power transistors, Silicon carbide",

author = "Jianhui Zhang and Xueqing Li and Petre Alexandrov and Terry Burke and Zhao, {Jian H.}",

note = "Funding Information: Manuscript received December 6, 2007; revised February 11, 2008. This work was supported in part by TARDEC SBIR under Program DAAE07-02-C-L050 and in part by the United Silicon Carbide, Inc. The review of this letter was arranged by Editor S.-H. Ryu. J. Zhang, X. Li, and P. Alexandrov are with the United Silicon Carbide, Inc., New Brunswick Technology Center, New Brunswick, NJ 08901 USA (e-mail: zhangusci@gmail.com). T. Burke is with U.S. Army TARDEC, Warren, MI 48397 USA. J. H. Zhao is with SiCLAB, Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854 USA. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.920273",

year = "2008",

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doi = "10.1109/LED.2008.920273",

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volume = "29",

pages = "471--473",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Zhang, Jianhui

AU - Li, Xueqing

AU - Alexandrov, Petre

AU - Burke, Terry

AU - Zhao, Jian H.

N1 - Funding Information: Manuscript received December 6, 2007; revised February 11, 2008. This work was supported in part by TARDEC SBIR under Program DAAE07-02-C-L050 and in part by the United Silicon Carbide, Inc. The review of this letter was arranged by Editor S.-H. Ryu. J. Zhang, X. Li, and P. Alexandrov are with the United Silicon Carbide, Inc., New Brunswick Technology Center, New Brunswick, NJ 08901 USA (e-mail: zhangusci@gmail.com). T. Burke is with U.S. Army TARDEC, Warren, MI 48397 USA. J. H. Zhao is with SiCLAB, Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854 USA. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.920273

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N2 - This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V, with a common-emitter current gain up to 31. Improvements on reliability have also been observed, including less forward voltage drift (< 2%) and no significant degradation on current gain in the active region.

AB - This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V, with a common-emitter current gain up to 31. Improvements on reliability have also been observed, including less forward voltage drift (< 2%) and no significant degradation on current gain in the active region.

KW - Bipolar junction transistors (BJTs)

KW - Power transistors

KW - Silicon carbide

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Implantation-free 4H-SiC bipolar junction transistors with double base epilayers

Abstract

All Science Journal Classification (ASJC) codes

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