Implantation-free 4H-SiC bipolar junction transistors with double base epilayers

Jianhui Zhang, Xueqing Li, Petre Alexandrov, Terry Burke, Jian H. Zhao

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking voltage of over 1300 V, with a common-emitter current gain up to 31. Improvements on reliability have also been observed, including less forward voltage drift (< 2%) and no significant degradation on current gain in the active region.

Original languageEnglish (US)
Pages (from-to)471-473
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


  • Bipolar junction transistors (BJTs)
  • Power transistors
  • Silicon carbide


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