Improved film growth and flatband voltage control of ALD HFO 2 and HF-AL-O with n + poly-Si gates using chemical oxides and optimized post-annealing

G. D. Wilk, M. L. Green, M. Y. Ho, B. W. Busch, T. W. Sorsch, F. P. Klemens, B. Brijs, R. B. Van Dover, A. Kornblit, Torgny Gustafsson, Eric Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J. M. Hergenrother

Research output: Contribution to conferencePaper

72 Scopus citations

Abstract

We demonstrate for the first time that chemical oxide underlayers ∼5Å thick provide improved growth and flatband voltage control of ALD HfO 2 films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-k stacks. Extremely small flatband voltage shifts of < 30 mV are achieved, corresponding to a very low fixed charge of Q f ∼2E11 /cm 2 .

Original languageEnglish (US)
Pages88-89
Number of pages2
StatePublished - Jan 1 2002
Event2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States
Duration: Jun 11 2002Jun 13 2002

Other

Other2002 Symposium on VLSI Technology Digest of Technical Papers
CountryUnited States
CityHonolulu, HI
Period6/11/026/13/02

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Wilk, G. D., Green, M. L., Ho, M. Y., Busch, B. W., Sorsch, T. W., Klemens, F. P., Brijs, B., Van Dover, R. B., Kornblit, A., Gustafsson, T., Garfunkel, E., Hillenius, S., Monroe, D., Kalavade, P., & Hergenrother, J. M. (2002). Improved film growth and flatband voltage control of ALD HFO 2 and HF-AL-O with n + poly-Si gates using chemical oxides and optimized post-annealing . 88-89. Paper presented at 2002 Symposium on VLSI Technology Digest of Technical Papers, Honolulu, HI, United States.