INCOHERENT LIGHT RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS.

McD Robinson, G. K. Celler, D. J. Lischner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Energy sources used to convert polycrystalline silicon-on-insulator films to single crystal through melting and recrystallization have included electron beams, lasers, graphite strip heaters, and incoherent light from tungsten halogen and vapor arc lamps. This review focuses on incoherent light recrystallization of polycrystalline silicon; comparing tungsten filament and vapor arc lamp sources, and linear zone melting vs. uniform illumination. The discussion includes material redistribution, defect formation, and the dynamics of melting.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherNorth-Holland
Pages71-80
Number of pages10
ISBN (Print)0444008993, 9780444008992
DOIs
StatePublished - 1984
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume33
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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