INFLUENCE OF CRYSTALLINE STRUCTURE ON PERFORMANCE OF THIN FILM TRANSISTORS.

G. K. Celler, L. E. Trimble, E. I. Povilonis, K. K. Ng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed a procedure to optimize electron mobility and leakage currents in MOSFETs fabricated in laser recrystallized polysilicon films on SiO//2. A shaped laser beam was used to obtain grain boundaries aligned with the current flow in MOS transistors. To suppress grain boundary diffusion, rapid thermal annealing replaced all high temperature processing steps subsequent to source and drain implantation. By combining these two approaches, functional transistors as short as 1. 5 mu m were obtained, and also 2 mu m-channel 19-stage ring oscillators with 115 psec/stage propagation delay.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherNorth-Holland
Pages127-132
Number of pages6
ISBN (Print)0444008993
Publication statusPublished - Dec 1 1984
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume33
ISSN (Print)0272-9172

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Celler, G. K., Trimble, L. E., Povilonis, E. I., & Ng, K. K. (1984). INFLUENCE OF CRYSTALLINE STRUCTURE ON PERFORMANCE OF THIN FILM TRANSISTORS. In Materials Research Society Symposia Proceedings (pp. 127-132). (Materials Research Society Symposia Proceedings; Vol. 33). North-Holland.