Influence of disorder on incoherent transport near the Mott transition

Miloš M. Radonjić, D. Tanasković, V. Dobrosavljević, Kristjan Haule

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We calculate the optical and dc conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on x-ray irradiated charge-transfer salts.

Original languageEnglish (US)
Article number075118
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number7
DOIs
StatePublished - Feb 23 2010

Fingerprint

Optical conductivity
Hubbard model
Inelastic scattering
Metal insulator transition
Charge carriers
Charge transfer
Salts
Doping (additives)
disorders
Bandwidth
X rays
conductivity
electrical resistivity
charge carriers
inelastic scattering
Experiments
charge transfer
insulators
salts
bandwidth

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Influence of disorder on incoherent transport near the Mott transition. / Radonjić, Miloš M.; Tanasković, D.; Dobrosavljević, V.; Haule, Kristjan.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 7, 075118, 23.02.2010.

Research output: Contribution to journalArticle

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AU - Radonjić, Miloš M.

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AU - Dobrosavljević, V.

AU - Haule, Kristjan

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AB - We calculate the optical and dc conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on x-ray irradiated charge-transfer salts.

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