Buried oxide layers, for silicon on insulator (SOI) structures, have been formed by high-dose oxygen implantation into silicon. Float-zone (100) wafers were implanted in the dose range 0. 25 to 1. 8 multiplied by 10**1**8 O** plus /cm**2 with 200 KeV O** plus ions at 500 degree C. The samples were subsequently annealed (furnace or incoherent lamp heater) in the range 1200 to 1405 degree C, for up to 24 hours. Examination by TEM, SIMS & RBS showed that improvements in microstructure were brought about by either high-temperature anneals for typically 2 hours or a 1250 degree C anneal for up to 24 hours. Furthermore by annealing at 1405 degree C it is shown that a dose as low as 0. 6 multiplied by 10**1**8 O** plus /cm**2 will form a continuous buried oxide layer below a good quality silicon layer.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Editors||G.G. Bentini, E. Fogarassy, A. Golanski|
|Publisher||Les Editions de Physique|
|Number of pages||9|
|State||Published - 1986|
All Science Journal Classification (ASJC) codes