Influence of impurities on stacking fault dynamics in SiC under external loading

Vladislav Domnich, Richard A. Haber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


The effect of additives (Al, B, N, O) on stacking fault (SF) dynamics in 3C, 2H, 4H, and 6H silicon carbide (SiC) polytypes under external loading is investigated using a combination of an axial next-nearest-neighbor Ising model and single-point energy calculations within the scheme of density-functional theory. Both hydrostatic pressure and pure shear stress are considered. Additives are considered as point defects substituting for either Si or C atoms in the SiC structure. The results of the simulations imply that the (3111) SF in 6H SiC has the highest energy of all possible stacking faults among the SiC polytypes considered. To various degrees, aluminum, nitrogen, and oxygen are found to facilitate SF induced plasticity in SiC The role of additives in promoting plastic deformation in SiC in a wider pressure range is discussed.

Original languageEnglish (US)
Title of host publicationAdvances in Ceramic Armor VI - A Collection of Papers Presented at the 34th International Conference on Advanced Ceramics and Composites, ICACC
PublisherAmerican Ceramic Society
Number of pages9
ISBN (Print)9780470594704
StatePublished - 2010

Publication series

NameCeramic Engineering and Science Proceedings
ISSN (Print)0196-6219

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry


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