Interaction effects in conductivity of a two-valley electron system in high-mobility Si inversion layers

N. N. Klimov, D. A. Knyazev, O. E. Omel'yanovskii, V. M. Pudalov, H. Kojima, M. E. Gershenson

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28 Scopus citations

Abstract

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors over wide ranges of electron densities n= (1.8-15) × 1011 cm-2, temperatures T=30 mK-4.2 K, and in-plane magnetic fields B=0-5 T. The experimental data have been analyzed using the theory of interaction effects in the conductivity σ of disordered two-dimensional (2D) systems. The parameters essential for comparison with the theory, such as the intervalley scattering time and valley splitting, have been measured or evaluated in independent experiments. The observed behavior of σ, including its quasilinear increase with decreasing T down to ∼0.4 K and its downturn at lower temperatures, is in agreement with the theory. The values of the Fermi-liquid parameter obtained from the comparison agree with the corresponding values extracted from the analysis of Shubnikov-de Haas oscillations based on the theory of magneto-oscillations in interacting 2D systems.

Original languageEnglish (US)
Article number195308
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number19
DOIs
StatePublished - Nov 11 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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