Interaction effects in conductivity of si inversion layers at intermediate temperatures

We compare the temperature dependence of resistivity [Formula presented] of Si-metal-oxide-semiconductor field-effect transistors with the recent theory by Zala et al. In this comparison, the effective mass [Formula presented] and [Formula presented] factor for mobile electrons have been determined from independent measurements. An anomalous increase of [Formula presented] with temperature, which has been considered as a signature of the “metallic” state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance [Formula presented] is only qualitatively consistent with the theory; the lack of quantitative agreement indicates that the magnetoresistance is more sensitive to sample-specific effects than [Formula presented].