Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure

Fangdi Wen, Xiaoran Liu, Qinghua Zhang, M. Kareev, B. Pal, Yanwei Cao, J. W. Freeland, A. T. N'Diaye, P. Shafer, E. Arenholz, Lin Gu, J. Chakhalian

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The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit interaction is known for the antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr2IrO4 by means of interfacial charge transfer in Sr2IrO4/LaNiO3 heterostructures. X-ray photoelectron spectroscopy on Ir 4f edge along with the x-ray absorption spectroscopy at Ni L 2 edge confirmed that 5d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface. Although the Sr2IrO4/LaNiO3 heterostructure remains non-metallic, we reveal that the transport behavior is no longer described by the Mott variable range hopping mode, but by the Efros-Shklovskii model. These findings highlight a powerful utility of interfaces to realize emerging electronic states of the Ruddlesden-Popper phases of Ir-based oxides.

Original languageEnglish (US)
Article number103009
JournalNew Journal of Physics
Issue number10
StatePublished - 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


  • complex oxide heterostructure
  • layered-Iridates
  • x-ray absorption spectroscopy

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    Wen, F., Liu, X., Zhang, Q., Kareev, M., Pal, B., Cao, Y., Freeland, J. W., N'Diaye, A. T., Shafer, P., Arenholz, E., Gu, L., & Chakhalian, J. (2019). Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure. New Journal of Physics, 21(10), [103009].