Investigation of properties of transparent and conducting V-doped Ga 2 O 3 films

Jian Huang, Yan Hu, Tianyu Zou, Ke Tang, Zilong Zhang, Yuncheng Ma, Bing Li, Linjun Wang, Yicheng Lu

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

V-doped Ga 2 O 3 films were prepared by using radio frequency (RF) magnetron sputtering method with different substrate temperature. The influence of substrate temperature on the properties of V-doped Ga 2 O 3 films was investigated. The results indicated that the crystalline quality of the films increases significantly with increasing substrate temperature. All films showed a smooth surface and high visible light transmission. As the substrate temperature increased, the optical band gap of the films decreased slightly and the resistivity decreased drastically. XPS spectra revealed the valence state of V dopant in the films and two binding energies corresponding to V 4+ and V 5+ ions were obtained.

Original languageEnglish (US)
Pages (from-to)70-74
Number of pages5
JournalSurface and Coatings Technology
Volume366
DOIs
StatePublished - May 25 2019

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Keywords

  • Film
  • Magnetron sputtering
  • Transparent
  • V-doped Ga O

Fingerprint

Dive into the research topics of 'Investigation of properties of transparent and conducting V-doped Ga 2 O 3 films'. Together they form a unique fingerprint.

Cite this