Investigation of properties of transparent and conducting V-doped Ga                         2                         O                         3                          films

Jian Huang; Yan Hu; Tianyu Zou; Ke Tang; Zilong Zhang; Yuncheng Ma; Bing Li; Linjun Wang; Yicheng Lu

doi:10.1016/j.surfcoat.2018.12.130

Investigation of properties of transparent and conducting V-doped Ga ₂ O ₃ films

Jian Huang, Yan Hu, Tianyu Zou, Ke Tang, Zilong Zhang, Yuncheng Ma, Bing Li, Linjun Wang, Yicheng Lu

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

V-doped Ga ₂ O ₃ films were prepared by using radio frequency (RF) magnetron sputtering method with different substrate temperature. The influence of substrate temperature on the properties of V-doped Ga ₂ O ₃ films was investigated. The results indicated that the crystalline quality of the films increases significantly with increasing substrate temperature. All films showed a smooth surface and high visible light transmission. As the substrate temperature increased, the optical band gap of the films decreased slightly and the resistivity decreased drastically. XPS spectra revealed the valence state of V dopant in the films and two binding energies corresponding to V ⁴⁺ and V ⁵⁺ ions were obtained.

Original language	English (US)
Pages (from-to)	70-74
Number of pages	5
Journal	Surface and Coatings Technology
Volume	366
DOIs	https://doi.org/10.1016/j.surfcoat.2018.12.130
State	Published - May 25 2019

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Keywords

Film
Magnetron sputtering
Transparent
V-doped Ga O

Access to Document

10.1016/j.surfcoat.2018.12.130

Cite this

Huang, J., Hu, Y., Zou, T., Tang, K., Zhang, Z., Ma, Y., Li, B., Wang, L., & Lu, Y. (2019). Investigation of properties of transparent and conducting V-doped Ga ₂ O ₃ films Surface and Coatings Technology, 366, 70-74. https://doi.org/10.1016/j.surfcoat.2018.12.130

@article{9b1d0bc0e8af4af98fec8a405fc4f31e,

title = " Investigation of properties of transparent and conducting V-doped Ga 2 O 3 films ",

abstract = " V-doped Ga 2 O 3 films were prepared by using radio frequency (RF) magnetron sputtering method with different substrate temperature. The influence of substrate temperature on the properties of V-doped Ga 2 O 3 films was investigated. The results indicated that the crystalline quality of the films increases significantly with increasing substrate temperature. All films showed a smooth surface and high visible light transmission. As the substrate temperature increased, the optical band gap of the films decreased slightly and the resistivity decreased drastically. XPS spectra revealed the valence state of V dopant in the films and two binding energies corresponding to V 4+ and V 5+ ions were obtained. ",

keywords = "Film, Magnetron sputtering, Transparent, V-doped Ga O",

author = "Jian Huang and Yan Hu and Tianyu Zou and Ke Tang and Zilong Zhang and Yuncheng Ma and Bing Li and Linjun Wang and Yicheng Lu",

note = "Funding Information: This work was funded by the National Natural Science Foundation of China (no. 11875186 ) and Science and Technology Commission of Shanghai (no. 16010500500 ).",

year = "2019",

month = may,

day = "25",

doi = "10.1016/j.surfcoat.2018.12.130",

language = "English (US)",

volume = "366",

pages = "70--74",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

}

Huang, J, Hu, Y, Zou, T, Tang, K, Zhang, Z, Ma, Y, Li, B, Wang, L & Lu, Y 2019, ' Investigation of properties of transparent and conducting V-doped Ga ₂ O ₃ films ', Surface and Coatings Technology, vol. 366, pp. 70-74. https://doi.org/10.1016/j.surfcoat.2018.12.130

Investigation of properties of transparent and conducting V-doped Ga ₂ O ₃ films . / Huang, Jian; Hu, Yan; Zou, Tianyu et al.
In: Surface and Coatings Technology, Vol. 366, 25.05.2019, p. 70-74.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Investigation of properties of transparent and conducting V-doped Ga 2 O 3 films

AU - Huang, Jian

AU - Hu, Yan

AU - Zou, Tianyu

AU - Tang, Ke

AU - Zhang, Zilong

AU - Ma, Yuncheng

AU - Li, Bing

AU - Wang, Linjun

AU - Lu, Yicheng

N1 - Funding Information: This work was funded by the National Natural Science Foundation of China (no. 11875186 ) and Science and Technology Commission of Shanghai (no. 16010500500 ).

PY - 2019/5/25

Y1 - 2019/5/25

N2 - V-doped Ga 2 O 3 films were prepared by using radio frequency (RF) magnetron sputtering method with different substrate temperature. The influence of substrate temperature on the properties of V-doped Ga 2 O 3 films was investigated. The results indicated that the crystalline quality of the films increases significantly with increasing substrate temperature. All films showed a smooth surface and high visible light transmission. As the substrate temperature increased, the optical band gap of the films decreased slightly and the resistivity decreased drastically. XPS spectra revealed the valence state of V dopant in the films and two binding energies corresponding to V 4+ and V 5+ ions were obtained.

AB - V-doped Ga 2 O 3 films were prepared by using radio frequency (RF) magnetron sputtering method with different substrate temperature. The influence of substrate temperature on the properties of V-doped Ga 2 O 3 films was investigated. The results indicated that the crystalline quality of the films increases significantly with increasing substrate temperature. All films showed a smooth surface and high visible light transmission. As the substrate temperature increased, the optical band gap of the films decreased slightly and the resistivity decreased drastically. XPS spectra revealed the valence state of V dopant in the films and two binding energies corresponding to V 4+ and V 5+ ions were obtained.

KW - Film

KW - Magnetron sputtering

KW - Transparent

KW - V-doped Ga O

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