Ion beam analysis of thin doped ZnO layers

Leszek S. Wielunski; D. H. Hill; J. Quinn; R. A. Bartynski; P. Wu; Y. Lu

doi:10.1016/j.nimb.2004.01.147

Ion beam analysis of thin doped ZnO layers

Leszek S. Wielunski, D. H. Hill, J. Quinn, R. A. Bartynski, P. Wu, Y. Lu

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

Thin films of ZnO and its ternary alloys Mg_xZn_1-xO have broad applications in transducers, resonators and filters. Similarly, transition metal- [TM-] doped ZnO is a promising candidate diluted magnetic semiconductor material for spintronic and spin-photonic applications. ZnO is a wide band gap semiconductor with direct energy band gap of 3.32 eV which can be increased upon Mg doping. Rutherford backscattering spectroscopy (RBS) with 2 MeV He ions has been used to monitor the thermal diffusion doping process of ZnO films grown on R-sapphire and silicon substrates. Concentration profiles of Mg and TM doping materials are measured as a function of processing conditions. This is a difficult case of RBS analysis as the signal of the TM dopants overlap significantly with that of Zn. Details of RBS spectra collection and analysis will be discussed. Results are compared with XPS measurements of dopant concentration and chemical state in the surface and near surface regions.

Original language	English (US)
Pages (from-to)	708-712
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	219-220
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2004.01.147
State	Published - Jun 2004
Event	Proceedings of the Sixteenth International Conference on Ion - Albuquerque, NM., United States Duration: Jun 29 2003 → Jul 4 2003

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

Keywords

Diffusion doping
Mg ZnO
MnZnO
Ni ZnO
Rutherford backscattering spectroscopy
Spintronics
VZnO
ZnO

Access to Document

10.1016/j.nimb.2004.01.147

Cite this

@article{4d481b65aa204dccafa36e8b94fc856b,

title = "Ion beam analysis of thin doped ZnO layers",

abstract = "Thin films of ZnO and its ternary alloys MgxZn1-xO have broad applications in transducers, resonators and filters. Similarly, transition metal- [TM-] doped ZnO is a promising candidate diluted magnetic semiconductor material for spintronic and spin-photonic applications. ZnO is a wide band gap semiconductor with direct energy band gap of 3.32 eV which can be increased upon Mg doping. Rutherford backscattering spectroscopy (RBS) with 2 MeV He ions has been used to monitor the thermal diffusion doping process of ZnO films grown on R-sapphire and silicon substrates. Concentration profiles of Mg and TM doping materials are measured as a function of processing conditions. This is a difficult case of RBS analysis as the signal of the TM dopants overlap significantly with that of Zn. Details of RBS spectra collection and analysis will be discussed. Results are compared with XPS measurements of dopant concentration and chemical state in the surface and near surface regions.",

keywords = "Diffusion doping, Mg ZnO, MnZnO, Ni ZnO, Rutherford backscattering spectroscopy, Spintronics, VZnO, ZnO",

author = "Wielunski, {Leszek S.} and Hill, {D. H.} and J. Quinn and Bartynski, {R. A.} and P. Wu and Y. Lu",

note = "Funding Information: This work has been funded by NJCHE: New Jersey Commission on Higher Education High-Tech Workforce Excellence Grant #02-801020-08 and the National Science Foundation under grant ECS-0224166. L.W. would like to express his thanks to Theodore Madey for his scientific support and help with manuscript.; Proceedings of the Sixteenth International Conference on Ion ; Conference date: 29-06-2003 Through 04-07-2003",

year = "2004",

month = jun,

doi = "10.1016/j.nimb.2004.01.147",

language = "English (US)",

volume = "219-220",

pages = "708--712",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Ion beam analysis of thin doped ZnO layers

AU - Wielunski, Leszek S.

AU - Hill, D. H.

AU - Quinn, J.

AU - Bartynski, R. A.

AU - Wu, P.

AU - Lu, Y.

N1 - Funding Information: This work has been funded by NJCHE: New Jersey Commission on Higher Education High-Tech Workforce Excellence Grant #02-801020-08 and the National Science Foundation under grant ECS-0224166. L.W. would like to express his thanks to Theodore Madey for his scientific support and help with manuscript.

PY - 2004/6

Y1 - 2004/6

N2 - Thin films of ZnO and its ternary alloys MgxZn1-xO have broad applications in transducers, resonators and filters. Similarly, transition metal- [TM-] doped ZnO is a promising candidate diluted magnetic semiconductor material for spintronic and spin-photonic applications. ZnO is a wide band gap semiconductor with direct energy band gap of 3.32 eV which can be increased upon Mg doping. Rutherford backscattering spectroscopy (RBS) with 2 MeV He ions has been used to monitor the thermal diffusion doping process of ZnO films grown on R-sapphire and silicon substrates. Concentration profiles of Mg and TM doping materials are measured as a function of processing conditions. This is a difficult case of RBS analysis as the signal of the TM dopants overlap significantly with that of Zn. Details of RBS spectra collection and analysis will be discussed. Results are compared with XPS measurements of dopant concentration and chemical state in the surface and near surface regions.

AB - Thin films of ZnO and its ternary alloys MgxZn1-xO have broad applications in transducers, resonators and filters. Similarly, transition metal- [TM-] doped ZnO is a promising candidate diluted magnetic semiconductor material for spintronic and spin-photonic applications. ZnO is a wide band gap semiconductor with direct energy band gap of 3.32 eV which can be increased upon Mg doping. Rutherford backscattering spectroscopy (RBS) with 2 MeV He ions has been used to monitor the thermal diffusion doping process of ZnO films grown on R-sapphire and silicon substrates. Concentration profiles of Mg and TM doping materials are measured as a function of processing conditions. This is a difficult case of RBS analysis as the signal of the TM dopants overlap significantly with that of Zn. Details of RBS spectra collection and analysis will be discussed. Results are compared with XPS measurements of dopant concentration and chemical state in the surface and near surface regions.

KW - Diffusion doping

KW - Mg ZnO

KW - MnZnO

KW - Ni ZnO

KW - Rutherford backscattering spectroscopy

KW - Spintronics

KW - VZnO

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=2342574878&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342574878&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2004.01.147

DO - 10.1016/j.nimb.2004.01.147

M3 - Conference article

AN - SCOPUS:2342574878

SN - 0168-583X

VL - 219-220

SP - 708

EP - 712

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Proceedings of the Sixteenth International Conference on Ion

Y2 - 29 June 2003 through 4 July 2003

ER -

Ion beam analysis of thin doped ZnO layers

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this