IR, visible and UV photoluminescence dependence on the composition of quantum nanocrystals

S. I. Kim, T. Hart, B. K. Khan, G. S. Tompa, Y. Lu, G. Sun, J. Khurgin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The recent demonstration of PL (Photoluminescence) and EL (Electroluminescence) in porous silicon has been a tremendous advance toward the integration of optoelectronics and Si digital electronics. It has come to be understood that the primary source of luminescence is quantized structures of Si or quantum nanocrystals (QNCs). We have demonstrated IR, visible and UV photoluminescence from QNCs formed of Si and Ge in a homogeneous SiO2 matrix.

Original languageEnglish (US)
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages591-596
Number of pages6
ISBN (Print)1558992251
StatePublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kim, S. I., Hart, T., Khan, B. K., Tompa, G. S., Lu, Y., Sun, G., & Khurgin, J. (1994). IR, visible and UV photoluminescence dependence on the composition of quantum nanocrystals. In Growth, Processing, and Characterization of Semiconductor Heterostructures (pp. 591-596). (Materials Research Society Symposium Proceedings; Vol. 326). Publ by Materials Research Society.