TY - GEN
T1 - KNaNbO3-LiTaO3-LiSbO3 thin films by pulsed laser deposition
AU - Abazari, M.
AU - Akdogan, Enver
AU - Safari, A.
PY - 2008
Y1 - 2008
N2 - <001> oriented epitaxial thin films of (K,Na)NbO3- LiTaO3-LiSbO3 (KNN-LT-LS) were grown by Pulsed Laser Deposition on <100> single crystal SrTiO3 (STO) substrates, which were coated with 200 nm SrRuO3. Experimental data based on X-ray phase analysis and elemental analysis by Rutherford backscattering spectroscopy indicated that deposition under 300 mTorr oxygen partial pressure, and 1.3 J/cm2 laser fluence were found to be the optimum condition to obtain single phase epitaxial film growth. Furthermore, nanostructural analysis by field emission SEM of films, grown to 400nm thickness at 600-750°C indicated a gradual transition from (001) textured columnar grains to a dense and crack free film. Using XRD φ scans, these films were found to be epitaxial with a cube-on-cube relationship with substrate. Dielectric measurements (1 kHz-1 MHz) at room temperature have revealed that the dielectric constant (K) and loss tangent (tanδ) decreased with increasing deposition temperature. Hysteresis loop measurements on 350 nm films showed saturation and spontaneous polarizations of 7.1 and 4 μC/cm2; respectively.
AB - <001> oriented epitaxial thin films of (K,Na)NbO3- LiTaO3-LiSbO3 (KNN-LT-LS) were grown by Pulsed Laser Deposition on <100> single crystal SrTiO3 (STO) substrates, which were coated with 200 nm SrRuO3. Experimental data based on X-ray phase analysis and elemental analysis by Rutherford backscattering spectroscopy indicated that deposition under 300 mTorr oxygen partial pressure, and 1.3 J/cm2 laser fluence were found to be the optimum condition to obtain single phase epitaxial film growth. Furthermore, nanostructural analysis by field emission SEM of films, grown to 400nm thickness at 600-750°C indicated a gradual transition from (001) textured columnar grains to a dense and crack free film. Using XRD φ scans, these films were found to be epitaxial with a cube-on-cube relationship with substrate. Dielectric measurements (1 kHz-1 MHz) at room temperature have revealed that the dielectric constant (K) and loss tangent (tanδ) decreased with increasing deposition temperature. Hysteresis loop measurements on 350 nm films showed saturation and spontaneous polarizations of 7.1 and 4 μC/cm2; respectively.
UR - http://www.scopus.com/inward/record.url?scp=58149525337&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=58149525337&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2008.4693851
DO - 10.1109/ISAF.2008.4693851
M3 - Conference contribution
AN - SCOPUS:58149525337
SN - 1424427444
SN - 9781424427444
T3 - IEEE International Symposium on Applications of Ferroelectrics
BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Y2 - 23 February 2008 through 28 February 2008
ER -