KNaNbO3-LiTaO3-LiSbO3 thin films by pulsed laser deposition

M. Abazari; E. K. Akdogan; A. Safari

doi:10.1109/ISAF.2008.4693851

KNaNbO₃-LiTaO₃-LiSbO₃ thin films by pulsed laser deposition

M. Abazari, E. K. Akdogan, A. Safari

Inst Adv Material Dev&Nanotech

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

<001> oriented epitaxial thin films of (K,Na)NbO₃- LiTaO₃-LiSbO₃ (KNN-LT-LS) were grown by Pulsed Laser Deposition on <100> single crystal SrTiO₃ (STO) substrates, which were coated with 200 nm SrRuO₃. Experimental data based on X-ray phase analysis and elemental analysis by Rutherford backscattering spectroscopy indicated that deposition under 300 mTorr oxygen partial pressure, and 1.3 J/cm² laser fluence were found to be the optimum condition to obtain single phase epitaxial film growth. Furthermore, nanostructural analysis by field emission SEM of films, grown to 400nm thickness at 600-750°C indicated a gradual transition from (001) textured columnar grains to a dense and crack free film. Using XRD φ scans, these films were found to be epitaxial with a cube-on-cube relationship with substrate. Dielectric measurements (1 kHz-1 MHz) at room temperature have revealed that the dielectric constant (K) and loss tangent (tanδ) decreased with increasing deposition temperature. Hysteresis loop measurements on 350 nm films showed saturation and spontaneous polarizations of 7.1 and 4 μC/cm²; respectively.

Original language	English (US)
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs	https://doi.org/10.1109/ISAF.2008.4693851
State	Published - 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: Feb 23 2008 → Feb 28 2008

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics
Volume	2

Other

Other	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country	United States
City	Santa Fe, NM
Period	2/23/08 → 2/28/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2008.4693851

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Cite this

@inproceedings{d7462b90a4fe4766ba2067e1e7e1cceb,

title = "KNaNbO3-LiTaO3-LiSbO3 thin films by pulsed laser deposition",

abstract = "<001> oriented epitaxial thin films of (K,Na)NbO3- LiTaO3-LiSbO3 (KNN-LT-LS) were grown by Pulsed Laser Deposition on <100> single crystal SrTiO3 (STO) substrates, which were coated with 200 nm SrRuO3. Experimental data based on X-ray phase analysis and elemental analysis by Rutherford backscattering spectroscopy indicated that deposition under 300 mTorr oxygen partial pressure, and 1.3 J/cm2 laser fluence were found to be the optimum condition to obtain single phase epitaxial film growth. Furthermore, nanostructural analysis by field emission SEM of films, grown to 400nm thickness at 600-750°C indicated a gradual transition from (001) textured columnar grains to a dense and crack free film. Using XRD φ scans, these films were found to be epitaxial with a cube-on-cube relationship with substrate. Dielectric measurements (1 kHz-1 MHz) at room temperature have revealed that the dielectric constant (K) and loss tangent (tanδ) decreased with increasing deposition temperature. Hysteresis loop measurements on 350 nm films showed saturation and spontaneous polarizations of 7.1 and 4 μC/cm2; respectively.",

author = "M. Abazari and Akdogan, {E. K.} and A. Safari",

year = "2008",

doi = "10.1109/ISAF.2008.4693851",

language = "English (US)",

isbn = "1424427444",

series = "IEEE International Symposium on Applications of Ferroelectrics",

booktitle = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008",

note = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 ; Conference date: 23-02-2008 Through 28-02-2008",

}

Abazari, M, Akdogan, EK & Safari, A 2008, KNaNbO₃-LiTaO₃-LiSbO₃ thin films by pulsed laser deposition. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008., 4693851, IEEE International Symposium on Applications of Ferroelectrics, vol. 2, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 2/23/08. https://doi.org/10.1109/ISAF.2008.4693851

TY - GEN

T1 - KNaNbO3-LiTaO3-LiSbO3 thin films by pulsed laser deposition

AU - Abazari, M.

AU - Akdogan, E. K.

AU - Safari, A.

PY - 2008

Y1 - 2008

N2 - <001> oriented epitaxial thin films of (K,Na)NbO3- LiTaO3-LiSbO3 (KNN-LT-LS) were grown by Pulsed Laser Deposition on <100> single crystal SrTiO3 (STO) substrates, which were coated with 200 nm SrRuO3. Experimental data based on X-ray phase analysis and elemental analysis by Rutherford backscattering spectroscopy indicated that deposition under 300 mTorr oxygen partial pressure, and 1.3 J/cm2 laser fluence were found to be the optimum condition to obtain single phase epitaxial film growth. Furthermore, nanostructural analysis by field emission SEM of films, grown to 400nm thickness at 600-750°C indicated a gradual transition from (001) textured columnar grains to a dense and crack free film. Using XRD φ scans, these films were found to be epitaxial with a cube-on-cube relationship with substrate. Dielectric measurements (1 kHz-1 MHz) at room temperature have revealed that the dielectric constant (K) and loss tangent (tanδ) decreased with increasing deposition temperature. Hysteresis loop measurements on 350 nm films showed saturation and spontaneous polarizations of 7.1 and 4 μC/cm2; respectively.

AB - <001> oriented epitaxial thin films of (K,Na)NbO3- LiTaO3-LiSbO3 (KNN-LT-LS) were grown by Pulsed Laser Deposition on <100> single crystal SrTiO3 (STO) substrates, which were coated with 200 nm SrRuO3. Experimental data based on X-ray phase analysis and elemental analysis by Rutherford backscattering spectroscopy indicated that deposition under 300 mTorr oxygen partial pressure, and 1.3 J/cm2 laser fluence were found to be the optimum condition to obtain single phase epitaxial film growth. Furthermore, nanostructural analysis by field emission SEM of films, grown to 400nm thickness at 600-750°C indicated a gradual transition from (001) textured columnar grains to a dense and crack free film. Using XRD φ scans, these films were found to be epitaxial with a cube-on-cube relationship with substrate. Dielectric measurements (1 kHz-1 MHz) at room temperature have revealed that the dielectric constant (K) and loss tangent (tanδ) decreased with increasing deposition temperature. Hysteresis loop measurements on 350 nm films showed saturation and spontaneous polarizations of 7.1 and 4 μC/cm2; respectively.

UR - http://www.scopus.com/inward/record.url?scp=58149525337&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149525337&partnerID=8YFLogxK

U2 - 10.1109/ISAF.2008.4693851

DO - 10.1109/ISAF.2008.4693851

M3 - Conference contribution

AN - SCOPUS:58149525337

SN - 1424427444

SN - 9781424427444

T3 - IEEE International Symposium on Applications of Ferroelectrics

BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

Y2 - 23 February 2008 through 28 February 2008

ER -