KNaNbO3-LiTaO3-LiSbO3 thin films by pulsed laser deposition

M. Abazari, E. K. Akdogan, A. Safari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

<001> oriented epitaxial thin films of (K,Na)NbO3- LiTaO3-LiSbO3 (KNN-LT-LS) were grown by Pulsed Laser Deposition on <100> single crystal SrTiO3 (STO) substrates, which were coated with 200 nm SrRuO3. Experimental data based on X-ray phase analysis and elemental analysis by Rutherford backscattering spectroscopy indicated that deposition under 300 mTorr oxygen partial pressure, and 1.3 J/cm2 laser fluence were found to be the optimum condition to obtain single phase epitaxial film growth. Furthermore, nanostructural analysis by field emission SEM of films, grown to 400nm thickness at 600-750°C indicated a gradual transition from (001) textured columnar grains to a dense and crack free film. Using XRD φ scans, these films were found to be epitaxial with a cube-on-cube relationship with substrate. Dielectric measurements (1 kHz-1 MHz) at room temperature have revealed that the dielectric constant (K) and loss tangent (tanδ) decreased with increasing deposition temperature. Hysteresis loop measurements on 350 nm films showed saturation and spontaneous polarizations of 7.1 and 4 μC/cm2; respectively.

Original languageEnglish (US)
Title of host publication17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs
StatePublished - 2008
Event17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States
Duration: Feb 23 2008Feb 28 2008

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics
Volume2

Other

Other17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
CountryUnited States
CitySanta Fe, NM
Period2/23/082/28/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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