Large area recrystallization of polysilicon with tungsten-halogen lamps

McD Robinson, D. J. Lischner, George Celler

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This review describes the recrystallization of polysilicon films with uniform heating from a large array of tungsten-halogen lamps. Single crystal films have been grown by Lateral Epitaxial Growth over Oxide (LEGO), using a precursor structure in which regions of isolation oxide alternate with seeding windows. Polysilicon films from 10 to 180 μm thick on this structure have been converted to single crystal over oxide islands as large as 3 mm. The defect density is low, except where solidification fronts meet, and small angle grain boundaries are absent. A cap oxide is required, and melt depth must be controlled to avoid distortion of the surface features during melting. The LEGO technique is compared with reports of silicon recrystallization using scanned lamps.

Original languageEnglish (US)
Pages (from-to)484-492
Number of pages9
JournalJournal of Crystal Growth
Volume63
Issue number3
DOIs
StatePublished - Oct 2 1983
Externally publishedYes

Fingerprint

Tungsten
Halogens
Electric lamps
Polysilicon
halogens
Oxides
luminaires
tungsten
oxides
Epitaxial growth
Single crystals
Defect density
single crystals
Silicon
inoculation
caps
solidification
Solidification
isolation
Grain boundaries

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Robinson, McD ; Lischner, D. J. ; Celler, George. / Large area recrystallization of polysilicon with tungsten-halogen lamps. In: Journal of Crystal Growth. 1983 ; Vol. 63, No. 3. pp. 484-492.
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Large area recrystallization of polysilicon with tungsten-halogen lamps. / Robinson, McD; Lischner, D. J.; Celler, George.

In: Journal of Crystal Growth, Vol. 63, No. 3, 02.10.1983, p. 484-492.

Research output: Contribution to journalArticle

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