This review describes the recrystallization of polysilicon films with uniform heating from a large array of tungsten-halogen lamps. Single crystal films have been grown by Lateral Epitaxial Growth over Oxide (LEGO), using a precursor structure in which regions of isolation oxide alternate with seeding windows. Polysilicon films from 10 to 180 μm thick on this structure have been converted to single crystal over oxide islands as large as 3 mm. The defect density is low, except where solidification fronts meet, and small angle grain boundaries are absent. A cap oxide is required, and melt depth must be controlled to avoid distortion of the surface features during melting. The LEGO technique is compared with reports of silicon recrystallization using scanned lamps.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry