Laser formation of Pt-Si Schottky barriers on silicon

C. J. Doherty; C. A. Crider; H. J. Leamy; G. K. Celler

doi:10.1007/BF02670861

Laser formation of Pt-Si Schottky barriers on silicon

C. J. Doherty, C. A. Crider, H. J. Leamy, G. K. Celler

Research output: Contribution to journal › Article › peer-review

Abstract

135 nsec pulses of λ = 1.06 μm light from a Nd: YAG laser have been used to form Schottky barriers by irradiation of a 500Å thick metal film on n-type silicon. Large area barriers were fabricated by over-lapping individual 30 μ diameter laser pulses of from 4 to 12 J/cm². The barrier height was 0.73 ± 0.03 V, independent of the laser power. The barrier quality, as assessed by measurement of the forward current characteristic, decreased with laser power to a value of n = 1.5 at 12 J/cm².

Original language	English (US)
Pages (from-to)	453-458
Number of pages	6
Journal	Journal of Electronic Materials
Volume	9
Issue number	2
DOIs	https://doi.org/10.1007/BF02670861
State	Published - Mar 1980
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Laser annealing
Pt-Si
Schottky barriers

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10.1007/BF02670861

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title = "Laser formation of Pt-Si Schottky barriers on silicon",

abstract = "135 nsec pulses of λ = 1.06 μm light from a Nd: YAG laser have been used to form Schottky barriers by irradiation of a 500{\AA} thick metal film on n-type silicon. Large area barriers were fabricated by over-lapping individual 30 μ diameter laser pulses of from 4 to 12 J/cm2. The barrier height was 0.73 ± 0.03 V, independent of the laser power. The barrier quality, as assessed by measurement of the forward current characteristic, decreased with laser power to a value of n = 1.5 at 12 J/cm2.",

keywords = "Laser annealing, Pt-Si, Schottky barriers",

author = "Doherty, {C. J.} and Crider, {C. A.} and Leamy, {H. J.} and Celler, {G. K.}",

year = "1980",

month = mar,

doi = "10.1007/BF02670861",

language = "English (US)",

volume = "9",

pages = "453--458",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "2",

}

TY - JOUR

T1 - Laser formation of Pt-Si Schottky barriers on silicon

AU - Doherty, C. J.

AU - Crider, C. A.

AU - Leamy, H. J.

AU - Celler, G. K.

PY - 1980/3

Y1 - 1980/3

N2 - 135 nsec pulses of λ = 1.06 μm light from a Nd: YAG laser have been used to form Schottky barriers by irradiation of a 500Å thick metal film on n-type silicon. Large area barriers were fabricated by over-lapping individual 30 μ diameter laser pulses of from 4 to 12 J/cm2. The barrier height was 0.73 ± 0.03 V, independent of the laser power. The barrier quality, as assessed by measurement of the forward current characteristic, decreased with laser power to a value of n = 1.5 at 12 J/cm2.

AB - 135 nsec pulses of λ = 1.06 μm light from a Nd: YAG laser have been used to form Schottky barriers by irradiation of a 500Å thick metal film on n-type silicon. Large area barriers were fabricated by over-lapping individual 30 μ diameter laser pulses of from 4 to 12 J/cm2. The barrier height was 0.73 ± 0.03 V, independent of the laser power. The barrier quality, as assessed by measurement of the forward current characteristic, decreased with laser power to a value of n = 1.5 at 12 J/cm2.

KW - Laser annealing

KW - Pt-Si

KW - Schottky barriers

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DO - 10.1007/BF02670861

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AN - SCOPUS:0018995501

SN - 0361-5235

VL - 9

SP - 453

EP - 458

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 2

ER -

Laser formation of Pt-Si Schottky barriers on silicon

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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