Laser formation of Pt-Si Schottky barriers on silicon

C. J. Doherty, C. A. Crider, H. J. Leamy, G. K. Celler

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

135 nsec pulses of λ = 1.06 μm light from a Nd: YAG laser have been used to form Schottky barriers by irradiation of a 500Å thick metal film on n-type silicon. Large area barriers were fabricated by over-lapping individual 30 μ diameter laser pulses of from 4 to 12 J/cm2. The barrier height was 0.73 ± 0.03 V, independent of the laser power. The barrier quality, as assessed by measurement of the forward current characteristic, decreased with laser power to a value of n = 1.5 at 12 J/cm2.

Original languageEnglish (US)
Pages (from-to)453-458
Number of pages6
JournalJournal of Electronic Materials
Volume9
Issue number2
DOIs
StatePublished - Mar 1980
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Laser annealing
  • Pt-Si
  • Schottky barriers

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