Lateral Epitaxial Growth over Oxide

Lynn O. Wilson, G. K. Celler

Research output: Contribution to journalArticle

10 Scopus citations


We model numerically formation of thick dielectrically isolated films by recrystallization from the melt. Si films are deposited over oxidized Si wafers, with a regular array of seeding windows opened in the isolation oxide. A stationary radiative heater melts the entire film and crystallization is controlled by the pattern of openings in the SiO2. The model provides two-dimensional temperature profiles during melting and solidification as well as the shape of the solid-liquid interface and its motion. It also predicts the amount of superheating and undercooling at the buried oxide as a function of the spacing between the windows in the oxide. The computed results are in agreement with the experimental data and clarify the influence of several processing parameters on melting and crystallization.

Original languageEnglish (US)
Pages (from-to)2748-2758
Number of pages11
JournalJournal of the Electrochemical Society
Issue number11
StatePublished - Nov 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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