Leakage current behavior in lead-free ferroelectric (K,Na) NbO3 -LiTaO3 -LiSbO3 thin films

M. Abazari, Ahmad Safari

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Abstract

Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44, Na0.52, Li0.04) (Nb0.84, Ta0.1, Sb0.06) O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

Original languageEnglish (US)
Article number262902
JournalApplied Physics Letters
Volume97
Issue number26
DOIs
StatePublished - Dec 27 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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