LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING.

J. M. Poate; J. C. Bean; W. L. Brown; R. L. Cohen; L. C. Feldman; H. J. Leamy; J. W. Rodgers; D. Rousseau; G. A. Rozgonyi; J. A. Shelnutt; T. T. Sheng; K. W. West; J. S. Williams; G. K. Celler

doi:10.1080/00337578008209249

LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING.

J. M. Poate, J. C. Bean, W. L. Brown, R. L. Cohen, L. C. Feldman, H. J. Leamy, J. W. Rodgers, D. Rousseau, G. A. Rozgonyi, J. A. Shelnutt, T. T. Sheng, K. W. West, J. S. Williams, G. K. Celler

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

Ion implanted and deposited Si layers have been recrystallized using pulsed Nd:YAG and cw Ar ion laser irradiation and thermally assisted flash annealing. By use of Rutherford backscattering and channeling, TEM, SEM and interference optical microscopy techniques, two distinct regrowth regimes have been established. (1) Liquid phase where regrowth occurs form the underlying solid-liquid interface. In this regime the regrowth layer is free of extended defects, dopant profiles are consistent with liquid diffusion and equilibrium solid solubilities can be exceeded. (2) Solid phase where regrowth occurs from the amorphous single-crystal interface. No dopant redistribution is observed.

Original language	English (US)
Pages (from-to)	167-174
Number of pages	8
Journal	Radiation effects
Volume	48
Issue number	1-4
DOIs	https://doi.org/10.1080/00337578008209249
State	Published - 1980
Externally published	Yes
Event	Proc of the Int Conf on Ion Beam Modif of Mater - Budapest, Hung Duration: Sep 4 1978 → Sep 8 1978

All Science Journal Classification (ASJC) codes

General Engineering

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10.1080/00337578008209249

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Poate, J. M., Bean, J. C., Brown, W. L., Cohen, R. L., Feldman, L. C., Leamy, H. J., Rodgers, J. W., Rousseau, D., Rozgonyi, G. A., Shelnutt, J. A., Sheng, T. T., West, K. W., Williams, J. S., & Celler, G. K. (1980). LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING. Radiation effects, 48(1-4), 167-174. https://doi.org/10.1080/00337578008209249

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title = "LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING.",

abstract = "Ion implanted and deposited Si layers have been recrystallized using pulsed Nd:YAG and cw Ar ion laser irradiation and thermally assisted flash annealing. By use of Rutherford backscattering and channeling, TEM, SEM and interference optical microscopy techniques, two distinct regrowth regimes have been established. (1) Liquid phase where regrowth occurs form the underlying solid-liquid interface. In this regime the regrowth layer is free of extended defects, dopant profiles are consistent with liquid diffusion and equilibrium solid solubilities can be exceeded. (2) Solid phase where regrowth occurs from the amorphous single-crystal interface. No dopant redistribution is observed.",

author = "Poate, {J. M.} and Bean, {J. C.} and Brown, {W. L.} and Cohen, {R. L.} and Feldman, {L. C.} and Leamy, {H. J.} and Rodgers, {J. W.} and D. Rousseau and Rozgonyi, {G. A.} and Shelnutt, {J. A.} and Sheng, {T. T.} and West, {K. W.} and Williams, {J. S.} and Celler, {G. K.}",

note = "Funding Information: Foundation item: Shanghai Pujiang Talent Program (15PJ1403300); Science and Technology Innovation Action Program from the Science and Technology Commission of Shanghai Municipality (15520720200); National Natural Science Foundation of China (61177052); Foundation for the Author of National Excellent Doctoral Dissertation of China (201154); Ying-Tong Education Foundation for Young Teachers in the Higher Education Institutions of China (131064).; Proc of the Int Conf on Ion Beam Modif of Mater ; Conference date: 04-09-1978 Through 08-09-1978",

year = "1980",

doi = "10.1080/00337578008209249",

language = "English (US)",

volume = "48",

pages = "167--174",

journal = "Radiation effects",

issn = "0033-7579",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

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TY - JOUR

T1 - LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING.

AU - Poate, J. M.

AU - Bean, J. C.

AU - Brown, W. L.

AU - Cohen, R. L.

AU - Feldman, L. C.

AU - Leamy, H. J.

AU - Rodgers, J. W.

AU - Rousseau, D.

AU - Rozgonyi, G. A.

AU - Shelnutt, J. A.

AU - Sheng, T. T.

AU - West, K. W.

AU - Williams, J. S.

AU - Celler, G. K.

N1 - Funding Information: Foundation item: Shanghai Pujiang Talent Program (15PJ1403300); Science and Technology Innovation Action Program from the Science and Technology Commission of Shanghai Municipality (15520720200); National Natural Science Foundation of China (61177052); Foundation for the Author of National Excellent Doctoral Dissertation of China (201154); Ying-Tong Education Foundation for Young Teachers in the Higher Education Institutions of China (131064).

PY - 1980

Y1 - 1980

N2 - Ion implanted and deposited Si layers have been recrystallized using pulsed Nd:YAG and cw Ar ion laser irradiation and thermally assisted flash annealing. By use of Rutherford backscattering and channeling, TEM, SEM and interference optical microscopy techniques, two distinct regrowth regimes have been established. (1) Liquid phase where regrowth occurs form the underlying solid-liquid interface. In this regime the regrowth layer is free of extended defects, dopant profiles are consistent with liquid diffusion and equilibrium solid solubilities can be exceeded. (2) Solid phase where regrowth occurs from the amorphous single-crystal interface. No dopant redistribution is observed.

AB - Ion implanted and deposited Si layers have been recrystallized using pulsed Nd:YAG and cw Ar ion laser irradiation and thermally assisted flash annealing. By use of Rutherford backscattering and channeling, TEM, SEM and interference optical microscopy techniques, two distinct regrowth regimes have been established. (1) Liquid phase where regrowth occurs form the underlying solid-liquid interface. In this regime the regrowth layer is free of extended defects, dopant profiles are consistent with liquid diffusion and equilibrium solid solubilities can be exceeded. (2) Solid phase where regrowth occurs from the amorphous single-crystal interface. No dopant redistribution is observed.

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U2 - 10.1080/00337578008209249

DO - 10.1080/00337578008209249

M3 - Conference article

AN - SCOPUS:0018044101

SN - 0033-7579

VL - 48

SP - 167

EP - 174

JO - Radiation effects

JF - Radiation effects

IS - 1-4

T2 - Proc of the Int Conf on Ion Beam Modif of Mater

Y2 - 4 September 1978 through 8 September 1978

ER -

LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING.

Abstract

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