Local bonding and electronic structure obtained from electron energy loss scattering

P. E. Batson, K. L. Kavanagh, C. Y. Wong, J. M. Woodall

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Preliminary results using the new high resolution Wien filter spectrometer coupled to the scanning transmission electron microscope show that it is now possible to investigate atomic bonding, and both filled and empty electronic states in inhomogeneous materials with a 1 nm spatial resolution. We show three examples: (1) identification of a 5 nm layer of Si2N2O at a Si/Si3N4 interface using core-loss near-edge fine structure, (2) observation of effects due to changes in the conduction band density of states due to Si-Si bond disorder at the Si/SiO2 interface, and (3) identification of a filled defect electronic state associated with a single misfit dislocation at a GaAs/GaInAs interface.

Original languageEnglish (US)
Pages (from-to)89-101
Number of pages13
JournalUltramicroscopy
Volume22
Issue number1-4
DOIs
StatePublished - 1987
Externally publishedYes

Fingerprint

Electronic states
Electronic structure
Energy dissipation
energy dissipation
Scattering
electron energy
electronic structure
Electrons
Conduction bands
Dislocations (crystals)
scattering
Spectrometers
Electron microscopes
Scanning
electronics
Defects
conduction bands
electron microscopes
spatial resolution
fine structure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

Cite this

Batson, P. E. ; Kavanagh, K. L. ; Wong, C. Y. ; Woodall, J. M. / Local bonding and electronic structure obtained from electron energy loss scattering. In: Ultramicroscopy. 1987 ; Vol. 22, No. 1-4. pp. 89-101.
@article{08237891468d4cd5affc90865b32ac34,
title = "Local bonding and electronic structure obtained from electron energy loss scattering",
abstract = "Preliminary results using the new high resolution Wien filter spectrometer coupled to the scanning transmission electron microscope show that it is now possible to investigate atomic bonding, and both filled and empty electronic states in inhomogeneous materials with a 1 nm spatial resolution. We show three examples: (1) identification of a 5 nm layer of Si2N2O at a Si/Si3N4 interface using core-loss near-edge fine structure, (2) observation of effects due to changes in the conduction band density of states due to Si-Si bond disorder at the Si/SiO2 interface, and (3) identification of a filled defect electronic state associated with a single misfit dislocation at a GaAs/GaInAs interface.",
author = "Batson, {P. E.} and Kavanagh, {K. L.} and Wong, {C. Y.} and Woodall, {J. M.}",
year = "1987",
doi = "10.1016/0304-3991(87)90053-2",
language = "English (US)",
volume = "22",
pages = "89--101",
journal = "Ultramicroscopy",
issn = "0304-3991",
publisher = "Elsevier",
number = "1-4",

}

Local bonding and electronic structure obtained from electron energy loss scattering. / Batson, P. E.; Kavanagh, K. L.; Wong, C. Y.; Woodall, J. M.

In: Ultramicroscopy, Vol. 22, No. 1-4, 1987, p. 89-101.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Local bonding and electronic structure obtained from electron energy loss scattering

AU - Batson, P. E.

AU - Kavanagh, K. L.

AU - Wong, C. Y.

AU - Woodall, J. M.

PY - 1987

Y1 - 1987

N2 - Preliminary results using the new high resolution Wien filter spectrometer coupled to the scanning transmission electron microscope show that it is now possible to investigate atomic bonding, and both filled and empty electronic states in inhomogeneous materials with a 1 nm spatial resolution. We show three examples: (1) identification of a 5 nm layer of Si2N2O at a Si/Si3N4 interface using core-loss near-edge fine structure, (2) observation of effects due to changes in the conduction band density of states due to Si-Si bond disorder at the Si/SiO2 interface, and (3) identification of a filled defect electronic state associated with a single misfit dislocation at a GaAs/GaInAs interface.

AB - Preliminary results using the new high resolution Wien filter spectrometer coupled to the scanning transmission electron microscope show that it is now possible to investigate atomic bonding, and both filled and empty electronic states in inhomogeneous materials with a 1 nm spatial resolution. We show three examples: (1) identification of a 5 nm layer of Si2N2O at a Si/Si3N4 interface using core-loss near-edge fine structure, (2) observation of effects due to changes in the conduction band density of states due to Si-Si bond disorder at the Si/SiO2 interface, and (3) identification of a filled defect electronic state associated with a single misfit dislocation at a GaAs/GaInAs interface.

UR - http://www.scopus.com/inward/record.url?scp=0022954389&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022954389&partnerID=8YFLogxK

U2 - 10.1016/0304-3991(87)90053-2

DO - 10.1016/0304-3991(87)90053-2

M3 - Article

AN - SCOPUS:0022954389

VL - 22

SP - 89

EP - 101

JO - Ultramicroscopy

JF - Ultramicroscopy

SN - 0304-3991

IS - 1-4

ER -