Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs

D. Esseni, M. Mastrapasqua, G. K. Celler, F. H. Baumann, C. Fiegn, L. Selmi, E. Sangiorgi

Research output: Contribution to journalArticlepeer-review

87 Scopus citations

Abstract

Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (Ninv) ultra-thin SOI mobility can be higher than in heavily doped bulk MOS due a lower effective field and it is largely insensitive to silicon thickness (TSI). However, at small Ninv the mobility is clearly reduced for decreasing TSI. The effective mobility data are used to study the implications for ultra-short MOS transistor performance at device simulation level.

Original languageEnglish (US)
Pages (from-to)671-674
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - Jan 1 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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