Low-leakage superconducting tunnel junctions with a single-crystal Al 2 O 3 barrier

Seongshik Oh, K. Cicak, R. McDermott, K. B. Cooper, K. D. Osborn, R. W. Simmonds, M. Steffen, J. M. Martinis, D. P. Pappas

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We have developed a two-step growth scheme for single-crystal Al 2 O 3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al 2 O 3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al 2 O 3 junction may open a new venue for coherent quantum devices.

Original languageEnglish (US)
Pages (from-to)1396-1399
Number of pages4
JournalSuperconductor Science and Technology
Volume18
Issue number10
DOIs
StatePublished - Oct 1 2005
Externally publishedYes

Fingerprint

Tunnel junctions
Aluminum
tunnel junctions
leakage
Single crystals
aluminum
Aluminum Oxide
single crystals
Rhenium
Electrodes
electrodes
rhenium
Leakage currents
tunnels
Tunnels
sapphire
Sapphire
aluminum oxides
Oxygen
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Oh, S., Cicak, K., McDermott, R., Cooper, K. B., Osborn, K. D., Simmonds, R. W., ... Pappas, D. P. (2005). Low-leakage superconducting tunnel junctions with a single-crystal Al 2 O 3 barrier Superconductor Science and Technology, 18(10), 1396-1399. https://doi.org/10.1088/0953-2048/18/10/026
Oh, Seongshik ; Cicak, K. ; McDermott, R. ; Cooper, K. B. ; Osborn, K. D. ; Simmonds, R. W. ; Steffen, M. ; Martinis, J. M. ; Pappas, D. P. / Low-leakage superconducting tunnel junctions with a single-crystal Al 2 O 3 barrier In: Superconductor Science and Technology. 2005 ; Vol. 18, No. 10. pp. 1396-1399.
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Oh, S, Cicak, K, McDermott, R, Cooper, KB, Osborn, KD, Simmonds, RW, Steffen, M, Martinis, JM & Pappas, DP 2005, ' Low-leakage superconducting tunnel junctions with a single-crystal Al 2 O 3 barrier ', Superconductor Science and Technology, vol. 18, no. 10, pp. 1396-1399. https://doi.org/10.1088/0953-2048/18/10/026

Low-leakage superconducting tunnel junctions with a single-crystal Al 2 O 3 barrier . / Oh, Seongshik; Cicak, K.; McDermott, R.; Cooper, K. B.; Osborn, K. D.; Simmonds, R. W.; Steffen, M.; Martinis, J. M.; Pappas, D. P.

In: Superconductor Science and Technology, Vol. 18, No. 10, 01.10.2005, p. 1396-1399.

Research output: Contribution to journalArticle

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T1 - Low-leakage superconducting tunnel junctions with a single-crystal Al 2 O 3 barrier

AU - Oh, Seongshik

AU - Cicak, K.

AU - McDermott, R.

AU - Cooper, K. B.

AU - Osborn, K. D.

AU - Simmonds, R. W.

AU - Steffen, M.

AU - Martinis, J. M.

AU - Pappas, D. P.

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