Low-leakage superconducting tunnel junctions with a single-crystal Al 2O3 barrier

S. Oh; K. Cicak; R. McDermott; K. B. Cooper; K. D. Osborn; R. W. Simmonds; M. Steffen; J. M. Martinis; D. P. Pappas

doi:10.1088/0953-2048/18/10/026

Low-leakage superconducting tunnel junctions with a single-crystal Al ₂O₃ barrier

S. Oh, K. Cicak, R. McDermott, K. B. Cooper, K. D. Osborn, R. W. Simmonds, M. Steffen, J. M. Martinis, D. P. Pappas

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We have developed a two-step growth scheme for single-crystal Al ₂O₃ tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al₂O₃ layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al₂O₃ junction may open a new venue for coherent quantum devices.

Original language	English (US)
Pages (from-to)	1396-1399
Number of pages	4
Journal	Superconductor Science and Technology
Volume	18
Issue number	10
DOIs	https://doi.org/10.1088/0953-2048/18/10/026
State	Published - Oct 1 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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title = "Low-leakage superconducting tunnel junctions with a single-crystal Al 2O3 barrier",

abstract = "We have developed a two-step growth scheme for single-crystal Al 2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al2O3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al2O3 junction may open a new venue for coherent quantum devices.",

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T1 - Low-leakage superconducting tunnel junctions with a single-crystal Al 2O3 barrier

AU - Oh, S.

AU - Cicak, K.

AU - McDermott, R.

AU - Cooper, K. B.

AU - Osborn, K. D.

AU - Simmonds, R. W.

AU - Steffen, M.

AU - Martinis, J. M.

AU - Pappas, D. P.

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AB - We have developed a two-step growth scheme for single-crystal Al 2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al2O3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al2O3 junction may open a new venue for coherent quantum devices.

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