Low-leakage superconducting tunnel junctions with a single-crystal Al 2O3 barrier

S. Oh, K. Cicak, R. McDermott, K. B. Cooper, K. D. Osborn, R. W. Simmonds, M. Steffen, J. M. Martinis, D. P. Pappas

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Abstract

We have developed a two-step growth scheme for single-crystal Al 2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al2O3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al2O3 junction may open a new venue for coherent quantum devices.

Original languageEnglish (US)
Pages (from-to)1396-1399
Number of pages4
JournalSuperconductor Science and Technology
Volume18
Issue number10
DOIs
StatePublished - Oct 1 2005
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Oh, S., Cicak, K., McDermott, R., Cooper, K. B., Osborn, K. D., Simmonds, R. W., Steffen, M., Martinis, J. M., & Pappas, D. P. (2005). Low-leakage superconducting tunnel junctions with a single-crystal Al 2O3 barrier. Superconductor Science and Technology, 18(10), 1396-1399. https://doi.org/10.1088/0953-2048/18/10/026