Abstract
We have developed a two-step growth scheme for single-crystal Al 2 O 3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al 2 O 3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al 2 O 3 junction may open a new venue for coherent quantum devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1396-1399 |
| Number of pages | 4 |
| Journal | Superconductor Science and Technology |
| Volume | 18 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1 2005 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Condensed Matter Physics
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Low-leakage superconducting tunnel junctions with a single-crystal Al 2 O 3 barrier . / Oh, Seongshik; Cicak, K.; McDermott, R.; Cooper, K. B.; Osborn, K. D.; Simmonds, R. W.; Steffen, M.; Martinis, J. M.; Pappas, D. P.
In: Superconductor Science and Technology, Vol. 18, No. 10, 01.10.2005, p. 1396-1399.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low-leakage superconducting tunnel junctions with a single-crystal Al 2 O 3 barrier
AU - Oh, Seongshik
AU - Cicak, K.
AU - McDermott, R.
AU - Cooper, K. B.
AU - Osborn, K. D.
AU - Simmonds, R. W.
AU - Steffen, M.
AU - Martinis, J. M.
AU - Pappas, D. P.
PY - 2005/10/1
Y1 - 2005/10/1
N2 - We have developed a two-step growth scheme for single-crystal Al 2 O 3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al 2 O 3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al 2 O 3 junction may open a new venue for coherent quantum devices.
AB - We have developed a two-step growth scheme for single-crystal Al 2 O 3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al 2 O 3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al 2 O 3 junction may open a new venue for coherent quantum devices.
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U2 - 10.1088/0953-2048/18/10/026
DO - 10.1088/0953-2048/18/10/026
M3 - Article
VL - 18
SP - 1396
EP - 1399
JO - Superconductor Science and Technology
JF - Superconductor Science and Technology
SN - 0953-2048
IS - 10
ER -