Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

Cecilia Mattevi, Florian Colléaux, Hokwon Kim, Manish Chhowalla, Thomas D. Anthopoulos

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We demonstrate low operating voltage (<|1.5|V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.

Original languageEnglish (US)
Title of host publicationNanocarbon Materials and Devices
Number of pages6
StatePublished - 2013
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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