Manganese-Based Ohmic Contact to p-GaAs

T. S. Kalkur, Y. C. Lu

Research output: Contribution to journalArticlepeer-review


Mn-In-Co, Mn-In-Pt, and Mn-Pt metallizations are used to form ohmic contacts on Be-implanted, rapid thermally annealed GaAs. The rapid thermal alloying of contact metallizations were performed in a nitrogen atmosphere in the temperature range of 350 to 800°C for 5 s. The as-deposited metallizations showed rectifying contacts and were found to be ohmic at an annealing temperature of 450°C, The contact resistivity was found to be dependent on the annealing temperature. The In-Mn-Pt and Mn-Pt metallization systems showed similar contact resistivities (1–2 x 10–5 Ω - cm-2) where as Mn-In-Co metallizations showed higher contact resistivity (5 x 10-4 Ω- cm-2) for an annealing temperature of 700°C and time 5 s in forming gas atmosphere. The surface morphologies of the contacts as observed in a scanning electron microscope were smooth even at an annealing temperature of 700°C. The interdiffusion of metallization components was studied by Auger electron spectroscopy.

Original languageEnglish (US)
Pages (from-to)3456-3459
Number of pages4
JournalJournal of the Electrochemical Society
Issue number11
StatePublished - 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


Dive into the research topics of 'Manganese-Based Ohmic Contact to p-GaAs'. Together they form a unique fingerprint.

Cite this