Abstract
Mn-In-Co, Mn-In-Pt, and Mn-Pt metallizations are used to form ohmic contacts on Be-implanted, rapid thermally annealed GaAs. The rapid thermal alloying of contact metallizations were performed in a nitrogen atmosphere in the temperature range of 350 to 800°C for 5 s. The as-deposited metallizations showed rectifying contacts and were found to be ohmic at an annealing temperature of 450°C, The contact resistivity was found to be dependent on the annealing temperature. The In-Mn-Pt and Mn-Pt metallization systems showed similar contact resistivities (1–2 x 10–5 Ω - cm-2) where as Mn-In-Co metallizations showed higher contact resistivity (5 x 10-4 Ω- cm-2) for an annealing temperature of 700°C and time 5 s in forming gas atmosphere. The surface morphologies of the contacts as observed in a scanning electron microscope were smooth even at an annealing temperature of 700°C. The interdiffusion of metallization components was studied by Auger electron spectroscopy.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3456-3459 |
| Number of pages | 4 |
| Journal | Journal of the Electrochemical Society |
| Volume | 138 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry