@inproceedings{f48978f580e94e879294d13c4788cc97,
title = "Material properties of GaN films grown on SiC/SOI substrate",
abstract = "Material properties of GaN thin films grown on 3C-SiC/semiconductor-on- insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.",
keywords = "3C-SiC, GaN, MOCVD, Photoluminescence, Raman scattering, SOI, XRD",
author = "Feng, {Z. C.} and C. Tran and Ferguson, {I. T.} and Zhao, {J. H.}",
year = "2009",
language = "English (US)",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1313--1316",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}