Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

M. Mastrapasqua, D. Esseni, G. K. Celler, C. Fiegna, L. Selmi, E. Sangiorgi

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Low-field electron and hole effective mobilities (μeff) of ultra-thin SOI n- and p-MOSFETs, down to a silicon thickness TSi of approximately 5 nm, have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (Ninv), ultra-thin SOI exhibit higher mobility than heavily doped bulk MOS and a weak dependence of mobility on silicon thickness. However, at small Ninv the mobility is clearly reduced for decreasing TSi, due to enhanced phonon scattering in the thin quantum well.

Original languageEnglish (US)
Pages (from-to)409-416
Number of pages8
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Nov 2001
Externally publishedYes
Event12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy
Duration: Jun 20 2001Jun 23 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


  • Low field mobility
  • Mobility
  • SOI


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