Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

M. Mastrapasqua; D. Esseni; G. K. Celler; C. Fiegna; L. Selmi; E. Sangiorgi

doi:10.1016/S0167-9317(01)00631-1

Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

M. Mastrapasqua, D. Esseni, G. K. Celler, C. Fiegna, L. Selmi, E. Sangiorgi

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Low-field electron and hole effective mobilities (μ_eff) of ultra-thin SOI n- and p-MOSFETs, down to a silicon thickness T_Si of approximately 5 nm, have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (N_inv), ultra-thin SOI exhibit higher mobility than heavily doped bulk MOS and a weak dependence of mobility on silicon thickness. However, at small N_inv the mobility is clearly reduced for decreasing T_Si, due to enhanced phonon scattering in the thin quantum well.

Original language	English (US)
Pages (from-to)	409-416
Number of pages	8
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00631-1
State	Published - Nov 2001
Externally published	Yes
Event	12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy Duration: Jun 20 2001 → Jun 23 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Low field mobility
Mobility
SOI

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10.1016/S0167-9317(01)00631-1

Cite this

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title = "Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs",

abstract = "Low-field electron and hole effective mobilities (μeff) of ultra-thin SOI n- and p-MOSFETs, down to a silicon thickness TSi of approximately 5 nm, have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (Ninv), ultra-thin SOI exhibit higher mobility than heavily doped bulk MOS and a weak dependence of mobility on silicon thickness. However, at small Ninv the mobility is clearly reduced for decreasing TSi, due to enhanced phonon scattering in the thin quantum well.",

keywords = "Low field mobility, Mobility, SOI",

author = "M. Mastrapasqua and D. Esseni and Celler, {G. K.} and C. Fiegna and L. Selmi and E. Sangiorgi",

note = "Funding Information: We would like to thanks F.H. Baumann for providing the TEM and acknowledge the help of the staff of the Murray Hill Silicon Fabrication Research Lab, especially F. Klemens and W. Mansfield. Encouragement and support from S. Hillenius, J.T.C. Lee, C. Rafferty and M. Banu are gratefully acknowledged. This work was partially funded by the Italian MURST (PRIN program).; 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) ; Conference date: 20-06-2001 Through 23-06-2001",

year = "2001",

month = nov,

doi = "10.1016/S0167-9317(01)00631-1",

language = "English (US)",

volume = "59",

pages = "409--416",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

AU - Mastrapasqua, M.

AU - Esseni, D.

AU - Celler, G. K.

AU - Fiegna, C.

AU - Selmi, L.

AU - Sangiorgi, E.

N1 - Funding Information: We would like to thanks F.H. Baumann for providing the TEM and acknowledge the help of the staff of the Murray Hill Silicon Fabrication Research Lab, especially F. Klemens and W. Mansfield. Encouragement and support from S. Hillenius, J.T.C. Lee, C. Rafferty and M. Banu are gratefully acknowledged. This work was partially funded by the Italian MURST (PRIN program).

PY - 2001/11

Y1 - 2001/11

N2 - Low-field electron and hole effective mobilities (μeff) of ultra-thin SOI n- and p-MOSFETs, down to a silicon thickness TSi of approximately 5 nm, have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (Ninv), ultra-thin SOI exhibit higher mobility than heavily doped bulk MOS and a weak dependence of mobility on silicon thickness. However, at small Ninv the mobility is clearly reduced for decreasing TSi, due to enhanced phonon scattering in the thin quantum well.

AB - Low-field electron and hole effective mobilities (μeff) of ultra-thin SOI n- and p-MOSFETs, down to a silicon thickness TSi of approximately 5 nm, have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (Ninv), ultra-thin SOI exhibit higher mobility than heavily doped bulk MOS and a weak dependence of mobility on silicon thickness. However, at small Ninv the mobility is clearly reduced for decreasing TSi, due to enhanced phonon scattering in the thin quantum well.

KW - Low field mobility

KW - Mobility

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=0035498476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035498476&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(01)00631-1

DO - 10.1016/S0167-9317(01)00631-1

M3 - Conference article

AN - SCOPUS:0035498476

SN - 0167-9317

VL - 59

SP - 409

EP - 416

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001)

Y2 - 20 June 2001 through 23 June 2001

ER -

Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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