TY - GEN
T1 - Microscopic photoemissive probing of doped regions on semiconductor surfaces
AU - Quiniou, B.
AU - Scarmozzino, R.
AU - Wu, Z.
AU - Osgood, R. M.
PY - 1989
Y1 - 1989
N2 - The use of photoemission for microscopic probing of the material characteristics of a semiconductor surface is demonstrated. A focused UV laser beam is scanned across a patterned semiconductor, and differences in surface properties such as doping or oxide/metal deposits are observed as differences in emitted photocurrent. The experimental setup is described, and measurements on Si (100) surfaces are reported. Measurements of photoelectric yield versus laser power exhibited a linear dependence on power, indicating that single photon photoemission is the dominant effect observed in these experiments. A typical trace of the photocurrent versus time for a stationary laser spot on the weakly doped p-type silicon region is shown. On steady illumination, a photocurrent is measured which subsequently rises, reaches a maximum, and then decays to a nearly steady-state value. This phenomenon is believed to be the result of adsorbed gases, probably water vapor. Plots of photocurrent versus time obtained while scanning the beam across the p+-on-p and n+-on-p samples are also shown and discussed.
AB - The use of photoemission for microscopic probing of the material characteristics of a semiconductor surface is demonstrated. A focused UV laser beam is scanned across a patterned semiconductor, and differences in surface properties such as doping or oxide/metal deposits are observed as differences in emitted photocurrent. The experimental setup is described, and measurements on Si (100) surfaces are reported. Measurements of photoelectric yield versus laser power exhibited a linear dependence on power, indicating that single photon photoemission is the dominant effect observed in these experiments. A typical trace of the photocurrent versus time for a stationary laser spot on the weakly doped p-type silicon region is shown. On steady illumination, a photocurrent is measured which subsequently rises, reaches a maximum, and then decays to a nearly steady-state value. This phenomenon is believed to be the result of adsorbed gases, probably water vapor. Plots of photocurrent versus time obtained while scanning the beam across the p+-on-p and n+-on-p samples are also shown and discussed.
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M3 - Conference contribution
AN - SCOPUS:0024874240
SN - 1557520860
T3 - CONFERENCE ON LASERS AND ELECTRO-0PTICS
SP - 430
EP - 431
BT - CONFERENCE ON LASERS AND ELECTRO-0PTICS
A2 - Anon, null
PB - Publ by IEEE
T2 - Summaries of Papers Presented at the Conference on Lasers and Electro-Optics
Y2 - 24 April 1989 through 28 April 1989
ER -