TY - JOUR
T1 - Microwave Hydrothermal Growth of Thick Epitaxial Lead Zirconate Titanate Films
AU - Pinceloup, Pascal
AU - Foroughi, Paniz
AU - Oledzka, Magdalena
AU - Mikulka-Bolen, Katherine
AU - Lencka, Malgorzata M.
AU - McCandlish, Larry E.
AU - Burgener, Paul E.
AU - Kopp, Daniel
AU - Riman, Richard E.
N1 - Funding Information:
The authors thank E. Gulliver for the EDS measurements. This work was supported by Office of Naval Research (ONR, N00014-00-1-0499).
Publisher Copyright:
© 2021, The Minerals, Metals & Materials Society.
PY - 2021/10
Y1 - 2021/10
N2 - Epitaxial thin and thick lead zirconate titanate (PZT) films with the composition of PbZr0.7Ti0.3O3 were grown onto single-crystal SrTiO3 (100), (111), and (110) substrates using both microwave and conventional hydrothermal methods at 90–180°C from amorphous Zr-Ti hydrous oxide and lead acetate precursors. Different bases, such as KOH, NaOH, and tetramethylammonium hydroxide pentahydrate (TMAH) were used to study the effect of mineralizer type on the film quality and morphology. The impact of substrate surface modification on PZT nucleation and film growth was examined through chemical etching or pre-coating the substrate with a RF-sputtered thin PZT layer. Thick PZT film (~27 µm in thickness) was successfully synthesized by periodic replenishment of the reaction nutrient. Moreover, according to the collected kinetic data for microwave hydrothermal reactions, a microwave continuous-flow reactor operating at ≈ 300°C may be used to grow PZT films with the thickness of the order of 1 mm.
AB - Epitaxial thin and thick lead zirconate titanate (PZT) films with the composition of PbZr0.7Ti0.3O3 were grown onto single-crystal SrTiO3 (100), (111), and (110) substrates using both microwave and conventional hydrothermal methods at 90–180°C from amorphous Zr-Ti hydrous oxide and lead acetate precursors. Different bases, such as KOH, NaOH, and tetramethylammonium hydroxide pentahydrate (TMAH) were used to study the effect of mineralizer type on the film quality and morphology. The impact of substrate surface modification on PZT nucleation and film growth was examined through chemical etching or pre-coating the substrate with a RF-sputtered thin PZT layer. Thick PZT film (~27 µm in thickness) was successfully synthesized by periodic replenishment of the reaction nutrient. Moreover, according to the collected kinetic data for microwave hydrothermal reactions, a microwave continuous-flow reactor operating at ≈ 300°C may be used to grow PZT films with the thickness of the order of 1 mm.
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U2 - 10.1007/s11837-021-04759-y
DO - 10.1007/s11837-021-04759-y
M3 - Article
AN - SCOPUS:85114759281
SN - 1047-4838
VL - 73
SP - 3010
EP - 3020
JO - Journal of Metals
JF - Journal of Metals
IS - 10
ER -