Misfit strain relaxation in (Ba 0.60Sr 0.40)TiO 3 epitaxial thin films on orthorhombic NdGaO 3 substrates

W. K. Simon, E. K. Akdogan, A. Safari

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Abstract

Strain relaxation in (Ba 0.60Sr 0.40)TiO 3 (BST) thin films on (110) orthorhombic NdGaO 3 substrates is investigated by x-ray diffractometry. Pole figure analysis indicates a [010] BST||[1̄10] NGO and [001] BST||[001] NGO in-plane and [100] BST||[100] NGO out-of-plane epitaxial relationship. The residual strains are relaxed at h ∼ 200 nm, and for h > 600 nm, films are essentially strain free. Two independent dislocations mechanisms operate to relieve the anisotropic misfit strains along the principal directions. The critical thickness for misfit dislocation formation along [001] and [010] are 11 and 15 nm, respectively. Stress analysis indicates deviation from linear elasticity for h < 200. The films with 10<h<25 nm are of monoclinic symmetry due to a finite principal shear stress along [110] of the initial orthorhombic cell.

Original languageEnglish (US)
Article number022902
JournalApplied Physics Letters
Volume89
Issue number2
DOIs
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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