Modeling and design of a monolithically integrated power converter on SiC

L. C. Yu, K. Sheng, J. H. Zhao

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


To fully explore the high temperature and high power density potential of the 4H-SiC material, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control. In this paper, static and dynamic characteristics of SiC lateral JFET (LJFET) devices are numerically simulated and compact circuit models developed. Based on these models, analog and digital integrated circuits functional blocks such as OPAMP, gate driver and logic gates are then designed and simulated. Finally, a fully integrated power converter including pulse-width-modulation circuit, over-temperature protection circuit and a power boost converter is designed and simulated. The converter has an input of 200 V and an output voltage of 400 V, 2.5 A, operating at 1 kW and 5 MHz.

Original languageEnglish (US)
Pages (from-to)1625-1630
Number of pages6
JournalSolid-State Electronics
Issue number10
StatePublished - Oct 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • Integration
  • Modeling
  • Power
  • SiC
  • Silicon carbide


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