Models of core reconstruction for the 90° partial dislocation in semiconductors

R. W. Nunes, David Vanderbilt

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

We compare the models that have been proposed in the literature for the atomic structure of the 90° partial dislocation in the homopolar semiconductors, silicon, diamond, and germanium. In particular, we examine the traditional single-period and our recently proposed double-period core structures. Ab initio and tight-binding results on the core energies are discussed, and the geometries are compared in the light of the available experimental information about dislocations in these systems. The double-period geometry is found to be the ground-state structure for all three materials. We address boundary-condition issues that have been recently raised concerning these results. The structures of point excitations (kinks, solitons, and kink-soliton complexes) in the two geometries are also reviewed.

Original languageEnglish (US)
Pages (from-to)10021-10027
Number of pages7
JournalJournal of Physics Condensed Matter
Volume12
Issue number49
DOIs
StatePublished - Dec 11 2000
EventExtended Defects in Semiconductors 2000 - Brighton, UK
Duration: Jul 18 2000Jul 22 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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